Siemens PZTA42, PZTA43 Datasheet
NPN Silicon High-Voltage Transistors PZTA 42
PZTA 43
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: PZTA 92, PZTA 93 (PNP)
Type Ordering Code
PZTA 42
PZTA 43
Marking
PZTA 42
PZTA 43
(tape and reel)
Q62702-Z2035
Q62702-Z2036
Pin Configuration
1 2 3 4
B C E C
Package
SOT-223
Maximum Ratings
Parameter Symbol Values Unit
PZTA 42 PZTA 43
Collector-emitter voltage VCE0 V
Collector-base voltage VCB0
Emitter-base voltage VEB0
300 200
300 200
6
Collector current IC mA500
Base current I
Total power dissipation, T
S = 124 ˚C
Junction temperature Tj ˚C
Storage temperature range T
B 100
tot W
P
1.5
150
stg
– 65 … + 150
1)
Thermal Resistance
Junction - ambient
2)
Junction - soldering point R
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1
Rth JA ≤ 72 K/W
th JS ≤ 17
5.91
Electrical Characteristics
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
PZTA 42
PZTA 43
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 1 mA, IB = 0 PZTA 42
PZTA 43
Collector-base breakdown voltage
C = 100 µA, IB = 0 PZTA 42
(BR)CB0
V
PZTA 43
V
Emitter-base breakdown voltage
E = 100 µA, IC = 0
Collector-base cutoff current
(BR)EB0 6––
I
CB0
VCB = 200 V PZTA 42
CB = 160 V PZTA 43
V
CB = 200 V, TA = 150 ˚C PZTA 42
V
CB = 160 V, TA = 150 ˚C PZTA 43
V
EB = 3 V, IC = 0
V
DC current gain
C = 1 mA, VCE = 10 V
C = 10 mA, VCE = 10 V
C = 30 mA, VCE = 10 V
Collector-emitter saturation voltage
C = 20 mA, IB = 2 mA PZTA 42
1)
1)
I
EB0 – – 100
FE
VCEsat
PZTA 43
300
200
300
200
–
–
–
–
25
40
40
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
100
20
20
–
–
–
0.5
0.4
VCollector-emitter breakdown voltage
nA
nA
µA
µA
nAEmitter-base cutoff current
–h
V
Base-emitter saturation voltage
C = 20 mA, IB = 2 mA
V
BEsat – – 0.9
AC characteristics
C = 20 mA, VCE = 10 V, f = 100 MHz
CB = 20 V, f = 1 MHz PZTA 42
V
PZTA 43
1)
Pulse test conditions: t ≤ 300µs,D = 2 %.
Semiconductor Group 2
f
T –70–
obo
C
–
–
–
–
3
4
MHzTransition frequency
pFCollector-base capacitance
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