Siemens PZT3906 Datasheet

PNP Silicon Switching Transistor PZT 3906

● High DC current gain 0.1 mA to 100 mA

● Low collector-emitter saturation voltage

● Complementary type: PZT 3904 (NPN)

Type Ordering Code

PZT 3906 Q62702-Z2030ZT 3906 SOT-223

Marking

(tape and reel)

Pin Configuration

1 2 3 4

B C E C

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 40 V

Collector-base voltage VCB0 40
Emitter-base voltage V
Collector current I
Total power dissipation, TS =80˚C
Junction temperature T
Storage temperature range T

EB0 5

C 200 mA

tot 1.5 W

P

j 150 ˚C
stg – 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 117 K/W

1)

Junction - soldering point Rth JS ≤ 47

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I
I
I
I
I

I
I

I
I

A = 25 ˚C, unless otherwise specified.

at T

PZT 3906

Parameter Symbol

UnitValues

min. typ. max.

DC characteristics

V

(BR)CE0 40 – –

C = 1 mA, IB = 0

Collector-base breakdown voltage

C = 10 µA, IB = 0

Emitter-base breakdown voltage

E = 10 µA, IC = 0

CB = 30 V, IE = 0

V

Collector-emitter cutoff current

CE = 30 V, + VBE = 0.5 V

V

Collector-base cutoff current

CE = 30 V, + VBE = 0.5 V

V

DC current gain

C = 0.1 mA, VCE = 1 V
C = 1 mA, VCE = 1 V
C = 10 mA, VCE = 1 V
C = 50 mA, VCE = 1 V
C = 100 mA, VCE = 1 V

C = 10 mA, IB = 1 mA
C = 50 mA, IB = 5 mA

Base-emitter saturation voltage

C = 10 mA, IC = 1 mA
C = 50 mA, IC = 5 mA

1)

1)

1)

V

(BR)CB0 40 – –

V

(BR)EB0 5––

I

CB0 ––50

I

CEV ––50

I

BEV ––50

h

FE

V

V

60
80
100
60
30

CEsat

–
–

BEsat

–
–

–
–
–
–
–

–
–

–
–

–
–
300
–
–

0.25

0.4

0.85

0.95

VCollector-emitter breakdown voltage

nACollector-base cutoff current

–

VCollector-emitter saturation voltage

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %

Semiconductor Group 2