Siemens KSY10 Datasheet
Hall Sensor KSY 10
Features
• High sensitivity
• High operating temperature range
• High linearity
• Low offset voltage
• Low
• Plastic-encapsulated miniature
Typical applications
• Detection of speed
• Detection of position
• Detection of diaphragm position in
• Magnetic field measurement at
• Magnetic field measurement at
• Magnetic field measurement in dc
TC of sensitivity and internal
resistance
package
pressure pickup cans
permanent magnets
magnetic yokes for current
determination
motors for contactless commutation
Dimensions in mm
Type Ordering Code
KSY 10 Q62705-K38
The position sensor KSY 10 is an ion-implanted Hall generator made of mono-crystalline
GaAs material. It is enclosed in a tubular plastic package with four tags.
When operating the sensor with a constant supply current, the output Hall voltage is
directly proportional to the magnetic field acting upon the sensor. This sensor is
outstanding for its high inductive sensitivity and very low temperature coefficient.
Semiconductor Group 1 07.96
KSY 10
The Hall sensor’s active area is approx. 0.2 mm × 0.2 mm. It is placed approx. 0.35 mm
below the plastic surface of the front side and is concentric towards the adjusting
marking on the rear. The chip carrier is non-magnetic.
The position sensor KSY 10 is particularly suitable for sensing the position of magnets
and of softmagnetic material, resp., if the sensor itself is mounted on a magnet.
Maximum ratings
Parameter Symbol Value Unit
Operating temperature
Storage temperature
Supply current
Thermal conductivity
Characteristics (
1)
T
= 25 °C)
A
Nominal supply current
Open-circuit sensitivity
Open-circuit Hall voltage
I
= I1N, B = 0.1 T
1
Ohmic offset voltage
I
= I1N, B = 0 T
1
2)
Linearity of Hall voltage
B = 0…0.5 T
B = 0…1 T
Supply and Hall-side internal resistance
B = 0 T
T
T
I
G
I
K
V
V
F
R
1
1N
A
stg
th A
B0
20
R0
L
10, 20
– 40 / + 150 °C
– 50 / + 160 °C
7mA
≥ 2.8 mW/K
5mA
170…230 V/AT
85…130 mV
≤ ± 25 mV
≤ ± 0.2
≤ ± 0.7
%
%
900…1200 Ω
Temperature coefficient of the
TC
open-circuit Hall voltage
I
= I1N, B = 0.2 T
1
Temperature coefficient of the internal
TC
resistance
B = 0.2 T
1) Thermal conductivity chip-ambient when soldered, in still air
2) Offset voltage selection upon request
Semiconductor Group 2
V20
R10, R20
approx. –0.05 %/K
0.1 … 0.18 %/K
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