Silicon Piezoresistive
Pressure Sensor
Features
• Low pressure and temperature hysteresis
• Fast response
• High sensitivity and linearity
• Fatigue free monocrystaline silicon diaphragm
giving high load cycle stability
• High long term stability
• Built in silicon temperature sensor
• Metal housing
KPY 62-RK
KPY 66-RK
Similar to TO-39-3
Type and
Symbol Pressure Range Unit Ordering Code
Marking
KPY 62 RK
P
… P
0
0 … 600 mbar Q62705-K319
N
KPY 63 RK 0 … 1.6 bar Q62705-K320
KPY 64 RK 0 … 4 Q62705-K321
KPY 65 RK 0 … 10 Q62705-K322
KPY 66 RK 0 … 25 Q62705-K292
Pin Configuration
1 Temp.- Sensor
(typ. R25 = 2 kΩ)
2 Not connected
3+
4 −
V
; Temperature sensor
IN
V
OUT
5 No pin
6 Shielding, to be connected
to +
V
IN
7 − V
8+V
Semiconductor Group 1 1998-05-11
IN
OUT
Absolute Maximum Ratings
Parameter Symbol Limit Values
Frontside Rearside
KPY 62-RK
KPY 66-RK
1)
Unit
Pressure overload
KPY 65 RK
KPY 66 RK
Operating temperature range
Storage temperature range
Supply voltage
1) Frontside coupling applies pressure onto chip face.
Rearside coupling applies pressure through Kovar centre tube.
P
T
T
V
MAX
A
stg
IN
20
50
10
10
− 40 …+ 125 ˚C
− 40 …+ 125 ˚C
12 V
bar
Electrical Characteristics
T
= 25 ˚C and VIN = 5 V, unless otherwise specified.
at
A
Parameter Symbol Limit Values Unit
min. typ. max.
Bridge resistance
Sensitivity
KPY 65 RK
KPY 66 RK
R
s
B
4 − 8kΩ
mV/
3.6
1.1
5.2
2.1
8.0
3.0
Vbar
Output voltage
KPY 65 RK
KPY 66 RK
Offset voltage
P = P
0
Linearity error(Best fit straight line)
P
= P0… P
0
N
KPY 65… 66 RK −± 0.3 ± 0.5
Pressure hysteresis
P
= P0, P2 = PN, P3 = P0KPY 65… 66 RK
1
V
V
F
P
fin
180
150
0
260
260
400
370
mV
mV
− 25 −+ 25
L
H
% V
V
%
fin
fin
−± 0.1 −
Semiconductor Group 2 1998-05-11