Siemens KPY66RK, KPY64RK, KPY65RK, KPY62RK Datasheet

Silicon Piezoresistive Pressure Sensor
Features
• Low pressure and temperature hysteresis
• High sensitivity and linearity
• Fatigue free monocrystaline silicon diaphragm giving high load cycle stability
• High long term stability
• Built in silicon temperature sensor
• Metal housing
KPY 62-RK
KPY 66-RK
Similar to TO-39-3
Type and
Symbol Pressure Range Unit Ordering Code
Marking
KPY 62 RK
P
P
0
0 600 mbar Q62705-K319
N
KPY 63 RK 0 1.6 bar Q62705-K320 KPY 64 RK 0 4 Q62705-K321 KPY 65 RK 0 10 Q62705-K322 KPY 66 RK 0 25 Q62705-K292
Pin Configuration
1 Temp.- Sensor
(typ. R25 = 2 k) 2 Not connected 3+ 4
V
; Temperature sensor
IN
V
OUT
5 No pin 6 Shielding, to be connected
to +
V
IN
7 V 8+V
Semiconductor Group 1 1998-05-11
IN
OUT
Absolute Maximum Ratings Parameter Symbol Limit Values
Frontside Rearside
KPY 62-RK KPY 66-RK
1)
Unit
Pressure overload
KPY 65 RK
KPY 66 RK Operating temperature range Storage temperature range Supply voltage
1) Frontside coupling applies pressure onto chip face.
Rearside coupling applies pressure through Kovar centre tube.
P
T T V
MAX
A
stg
IN
20 50
10 10
40 …+ 125 ˚C
40 …+ 125 ˚C
12 V
bar
Electrical Characteristics
T
= 25 ˚C and VIN = 5 V, unless otherwise specified.
at
A
Parameter Symbol Limit Values Unit
min. typ. max.
Bridge resistance Sensitivity
KPY 65 RK KPY 66 RK
R s
B
4 8k
mV/
3.6
1.1
5.2
2.1
8.0
3.0
Vbar
Output voltage
KPY 65 RK KPY 66 RK
Offset voltage
P = P
0
Linearity error(Best fit straight line)
P
= P0… P
0
N
KPY 65 66 RK −± 0.3 ± 0.5
Pressure hysteresis
P
= P0, P2 = PN, P3 = P0KPY 65 66 RK
1
V
V
F
P
fin
180 150
0
260 260
400 370
mV
mV
25 −+ 25
L
H
% V
V
%
fin
fin
−± 0.1
Semiconductor Group 2 1998-05-11
Loading...
+ 1 hidden pages