Siemens KPY33-R Datasheet
Silicon Piezoresistive
Relative Pressure Sensor
Features
• Low pressure and temperature hysteresis
• Fast response
• High sensitivity and linearity
• Fatigue free monocrystaline silicon diaphragm
giving high load cycle stability
• High long term stability
• Metal Housing
KPY 33-R
TO-8-1
Type and
Marking
KPY 33-R
Symbol Pressure
Range
P
… P
0
N
0 … 0.1 bar Q62705-K151
Pin Configuration
1
2+V
+V
OUT
IN
3 Not connected
4 Temperature sensor
5 Temperature sensor
6 Shielding, to be connected
to +
V
in
7 − V
8 − V
OUT
IN
Unit Ordering Code
Semiconductor Group 1 02.97
Absolute Maximum Ratings
Parameter Symbol Limit Values Unit
KPY 33-R
Pressure overload
Operating temperature range
Storage temperature range
Supply voltage
P
T
T
V
MAX
A
stg
IN
1.0 bar
− 40 …+ 125 ˚C
− 50 …+ 150 ˚C
12 V
Electrical Characteristics
at
T
= 25 ˚C and VIN = 5 V, unless otherwise specified.
A
Parameter Symbol Limit Values Unit
min. typ. max.
Bridge resistance
Sensitivity
Output voltage
Offset voltage
P = P
0
Linearity error (Best fit straight line)
P = P
... P
0
N
R
s
V
V
F
B
fin
0
L
4 − 8kΩ
56.0 80.0 − mV/Vbar
28.0 40.0 − mV
mV
− 25 −+ 25
V
%
−± 0.2 ± 0.5
fin
Pressure hysteresis
P
= P0, P2= PN, P3= P
1
0
P
V
H
%
−± 0.1 −
Electrical Characteristics
at
T
= 25 ˚C, T2 = 125 ˚C, T3 = 25 ˚C and VIN = 5 V, unless otherwise specified.
1
Parameter Symbol Limit Values Unit
min. typ. max.
Temperature coefficient of
V
fin
TC
Vfin
%/K
− 0.19 −−0.10
Temperature coefficient of
V
0
TC
V0
%/K
− 0.05 − + 0.05
Temperature coefficient of
R
TC
B
RB
%/K
− + 0.095 −
Temperature hysteresis of
V
V
0
fin
;
TH
% v. V
− 0.7 ± 0.1 + 0.7
fin
fin
Semiconductor Group 2
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