Siemens IL213AT, IL211AT, IL212AT Datasheet

IL211AT/IL212AT/IL213AT

PHOTOTRANSISTOR

SMALL OUTLINE

SURFACE MOUNT OPTOCOUPLER

FEATURES

NEW

• High Current Transfer Ratio

IL211AT—20% Minimum
IL212AT—50% Minimum
IL213AT—100% Minimum

• Isolation Voltage, 2500 VAC

• Electrical Specifications Similar to

Standard 6 Pin Coupler

• Industry Standard SOIC-8 Surface

Mountable Package

• Standard Lead Spacing, .05"

• Available in Tape and Reel (suffix T)

(Conforms to EIA Standard RS481A)

• Compatible with Dual Wave, Vapor Phase

and IR Reflow Soldering

• Underwriters Lab File #E52744

(Code Letter P)

DESCRIPTION

The IL211AT/212AT/213AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT//212AT/
213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.

A choice of 20, 50, and 100% minimum CTR at

=10 mA makes these optocouplers suitable for a

I

F

variety of different applications.

Maximum Ratings
Emitter

Peak Reverse Voltage ....................................... 6.0 V

Continuous Forward Current .......................... 60 mA

Power Dissipation at 25°C ............................. 90 mW

Derate Linearly from 25°C ....................... 1.2 mW/°C

Detector

Collector-Emitter Breakdown Voltage ................ 30 V

Emitter-Collector Breakdown Voltage .................. 7 V

Collector-Base Breakdown Voltage ................... 70 V

Power Dissipation ........................................150 mW

Derate Linearly from 25°C ....................... 2.0 mW/°C

Package

Total Package Dissipation at 25°C Ambient

(LED + Detector) ......................................280 mW

Derate Linearly from 25°C ....................... 3.3 mW/°C

Storage Temperature ..................... –55°C to +150°C

Operating Temperature .................–55°C to +100°C

Soldering Time at 260°C ............................... 10 sec.

RMS

Package Dimensions in Inches (mm)

.240

(6.10)

.120±.005

(3.05±.13)

Pin One ID

.004 (.10)
.008 (.20)

.192±.005
(4.88±.13)

.050 (1.27)

.021 (.53)

.154±.005

C

L

(3.91±.13)

.016 (.41)

typ.

.020±.004

TOLERANCE: ±.005 (unless otherwise noted)

.015±.002

(.38±.05)

.008 (.20)

(.15±.10)

2 plcs.

Anode

Cathode

NC
NC

1
2
3
4

40°

5° max.

R.010
(.25) max.

.058±.005

(1.49±.13)

Characteristics (TA=25°C)

Emitter

Forward Voltage V
Reverse Current I
Capacitance C

Detector

Breakdown Voltage BV

Collector-Emitter V

Dark Current I

Collector-Emitter

Capacitance C

Package

DC Current Transfer CTR

IL211AT 20 50
IL212AT 50 80
IL213AT 100 130

Collector-Emitter

Saturation Voltage V

Isolation Test

Voltage V

Capacitance,

Input to Output C

Resistance,

Input to Output R

Switching Time t

Specifications subject to change.

Symbol Min. Typ. Max. Unit Condition

F

R

O

CEO

BV

ECO

CEOdark

CE

CE sat

IO

IO

IO

, t

ON

DC

1.3 1.5 V IF=10 mA

0.1 100 µAV
25 pF VR=0

30 V I
7VI

550nAIF=0

10 pF VCE=0

%I

0.4 IF=10 mA,

2500 VAC

0.5 pF

100 GΩ

3.0 µsI

OFF

RMS

8

NC

7

Base

6

Collector

5

Emitter

7°

.125±.005

(3.18±.13)

Lead
Coplanarity
±.0015 (.04)
max.

=6.0 V

R

=10 µA

C

=10 µA

E

=10 V,

CE

=10 mA

F

=5 V

V

CE

=2.0 mA

I

C

=2 mA,

C

=100 Ω,

R

E

=10 V

V

CE

Semiconductor Group 4–4

10.95

V

C

C

C

V

Figure 1. Forward voltage versus forward current

V

C

1.4

1.3

1.2

1.1

1.0

0.9

0.8

VF - Forward Voltage - V

0.7

IF - Forward Current - mA

Figure 3. Collector-emitter current versus LED
current

150

Ta = 25°

Ta = -55°C

Ta = 25°C

Ta = 85°C

Vce = 10

100

Figure 2. Normalized non-saturated and
saturated CTRce versus LED current

1.5
Normalized to:

Vce = 10 V
IF = 10 mA

1.0

Ta = 25°C

0.5

100101.1

0.0

NCTRce - Normalized CTRce

.1 1 10 100

Figure 4. Normalized collector-base
photocurrent versus LED current

IF - LED Current - mA

Vce = 5

Vce = 0.4 V

100

Normalized to:
Vcb = 9.3 V
IF = 1 mA

10

Ta = 25 °C

50

Current - mA

Ice - Collector-emitter

0

.1 1 10 100

IF - LED Current - mA

Figure 5. Normalized collector-base
photocurrent versus LED current

10

Normalized to:
Vcb = 9.3 V
IF = 10 mA

1

Ta = 25 °C

.1

NIcb - Normalized Icb

.01

.1 1 10 100

IF - LED Current - mA

Figure 7. Collector-emitter leakage current
versus temperature

5

10

4

10

3

10

2

10

1

10

0

10

-1

10

Iceo - Collector-Emitter - nA

-2

10

Ta - Ambient Temperature - °C

Vce = 10V

TYPICAL

Vce = 0.4 V

100806040200-20

1

NIcb - Normalized Icb

.1

.1110100

IF - LED Current - mA

Figure 6. Collector-base photocurrent versus
LED current

1000

Current - µA

Icb - Collector-base

Figure 8. Normalized saturated HFE versus
base current and temperature

2.0

1.5

1.0

0.5

Saturated HFE

NHFE(sat) - Normalized

0.0

Ta = 25°C
Vcb = 9.3 V

100

10

1

.1

.1110100

IF - LED Current - mA

70°

25°

Vce = 0.4 V

1 10 100 1000

50°

Ib - Base Current - µA

Normalized to:

Ib = 20µA
Vce = 10
Ta = 25 °C

Semiconductor Group 4–5