Siemens IL213A, IL212A, IL211A Datasheet

Dimensions in inches (mm)

(

FEATURES

• High Current Transfer Ratio
IL211A—20% Minimum
IL212A—50% Minimum
IL213A—100% Minimum

• Isolation V oltage, 2500 VA C

• Electrical Specifications Similar to
Standard 6 Pin Coupler

• Industry Standard SOIC-8 Surface
Mountable Package

• Standard Lead Spacing, .05"

• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)

• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering

• Underwriters Lab File #E52744
(Code Letter P)

DESCRIPTION

The IL211A/212A/213A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor . Signal information, including a
DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL211A//212A/213A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.

A choice of 20, 50, and 100% minimum CTR at
I

=10 mA makes these optocouplers suitable for a

F

variety of different applications.

Maximum Ratings
Emitter

Peak Reverse Voltage.....................................6.0 V

Continuous Forward Current.........................60 mA

Power Dissipation at 25 °
Derate Linearly from 25 °

Detector

Collector-Emitter Breakdown Voltage...............30 V

Emitter-Collector Breakdown Voltage.................7 V

Collector-Base Breakdown Voltage..................70 V

Power Dissipation ......................................150 mW

Derate Linearly from 25 °

Package

Total Package Dissipation at 25 ° C Ambient

(LED + Detector) ....................................280 mW

Derate Linearly from 25 °

Storage Temperature ...................–55 °

Operating Temperature ...............–55 °

Soldering Time at 260 °

IL211A/212A/213A

PHOTOTRANSISTOR

SMALL OUTLINE

SURFACE MOUNT OPTOCOUPLER

NEW

RMS

C............................90 mW

C......................1.2 mW/ ° C

C2.0 mW/ ° C

C......................3.3 mW/ ° C

C to +150 ° C
C to +100 ° C

C............................. 10 sec.

.120±.005

(3.05±.13)

.240

6.10)

Pin One ID

.192±.005
(4.88±.13)

.004 (.10)
.008 (.20)

.021 (.53)

Characteristics

Emitter

Forward Voltage V
Reverse Current I
Capacitance C

Detector

Breakdown Voltage B

Dark Current,
Collector-Emitter

Capacitance,
Collector-Emitter

Package

DC Current Transfer
Ratio
IL211A
IL212A
IL213A

Saturation Voltage,
Collector-Emitter

Isolation Test
Voltage

Capacitance,
Input toOutput

Resistance,
Input to Output

Switching Time t

5–1

( T

A

.154±.005

C

L

(3.91±.13)

.016 (.41)

.015±.002

.008 (.20)

.050 (1.27)

typ.

.020±.004

(.15±.10)

=25 ° C)

Symbol Min. Typ. Max. Unit Condition

F

R

O

VCEO

B

VECO

I

CEOdark

C

CE

CTR

DC

20
50
100

V

CEsat

V

IO

C

IO

R

IO

,t

on

2500 VAC

off

Anode

1

Cathode

(.38±.05)

2 plcs.

1.3 1.5 V I

0.1 100 µ AV
25 pF V

30
7

550nA V

10 pF V

50
80
130

0.5 pF

100 G Ω

3.0

2

NC

3

NC

4

40°

5° max.

R.010
(.25) max.

0.4 I

8

NC

7

Base

6

Collector

5

Emitter

7°

.058±.005

(1.49±.13)

.125±.005

(3.18±.13)

Lead
Coplanarity
±.0015 (.04)
max.

V
V

%I

RMS

µ sI

=10 mA

F

=6.0 V

R

=0

R

I

=10 µ A

C

I

=10 µ A

E

=10 V

CE

=0

I

F

=0

CE

=10 mA,

F

V

=5 V

CE

=10 mA,

F

I

=2.0 mA

C

=2 mA,

C

R

=100 Ω ,

E

V

=10 V

CE

V

V

V

C

gp

C

C

Figure 1. Forward voltage versus forward current

1.4

1.3

1.2

1.1

1.0

0.9

Vf-Forward Voltage - V

0.8

0.7
.1 1 10 100

Ta = -55°C

Ta = 25°C

Ta = 100°C

If- Forward Current - mA

Figure 2. Normalized non-saturated and saturated
CTRce versus LED current

1.5
Normalized to:

Vce = 10 V
IF = 10 mA

Ta = 25 °C

1.0

0.5

0.0

NCTRce - Normalized CTRce

.1 1 10 100

IF - LED Current - mA

Vce = 5

Vce = 0.4

Figure 5. Normalized collector-base photocurrent
versus LED current

10

Norma liz ed to:
 Vcb = 9.3 V

 IF = 10 mA

1

Ta = 25 °C

.1

NI cb - No rm a liz ed Icb

.01

.1 1 10 100

IF - LED Curren t - mA

Figure 6. Collector-base photocurrent versus LED
current

1000

Icb - Collector-base

Ta = 2 5° C
Vcb = 9.3 V

100

10

Current - µA

1

.1

.1110100

IF - LED Curre nt - mA

Figure 3. Collector-emitter current versus LED current

150

Ta = 25°

Vce = 10 V

100

50

Current - mA

Ice - Collector-emitter

0

.1 1 10 100

IF - LED Current - mA

Vce = 0.4

Figure 4. Normalized collector-base photocurrent
versus LED current

100

Norm alized to:
 Vcb = 9.3 V
IF = 1 mA

10

 Ta = 25 °C

1

NIcb - Norm alized I cb

.1

.1 1 10 100

IF - LED Current - m A

Figure 7. Collector-emitter leakage current versus
temperature

5

10

4

10

3

10

2

10

1

10

0

10

-1

10

Iceo - Collector-Emitter - nA

-2

10

Ta - Ambient Temperature - °C

Vce = 10V

TYPICAL

100806040200-20

Figure 8. Normalized saturated HFE versus base
current and temperature

2.0

1.5

25°C

70°

50°

Normalized to:

Ib = 20µA
Vce = 10 V

Ta = 25 °C

1.0
Vce = 0.4 V

0.5

Saturated HFE

NHFE(sat) - Normalized

0.0

1 10 100 1000

Ib - Base Current - µA

5–2

IL211A/212A/213A