Siemens IL205AT, IL207AT, IL208AT, IL206AT Datasheet

IL205AT/206AT/207AT/

208AT

PHOTOTRANSISTOR

FEATURES

• High Current Transfer Ratio, I

V

=5 V

CE

IL205AT, 40 – 80%
IL206AT, 63 –125%
IL207AT, 100 – 200%
IL208AT, 160 – 320%

• High BV

CEO

, 70 V

• Isolation Voltage, 2500 VAC

=10mA,

F

RMS

• Industry Standard SOIC-8 Surface

Mountable Package

• Standard Lead Spacing, .05"

• Available in Tape and Reel (suffix T)

(Conforms to EIA Standard RS481A)

• Compatible with Dual Wave, Vapor Phase

and IR Reflow Soldering

• Underwriters Lab File #E52744

(Code Letter P)

SURFACE MOUNT OPTOCOUPLER

Package Dimensions in Inches (mm)

.120±.005

.240

(6.10)

(3.05±.13)

Pin One ID

.004 (.10)
.008 (.20)

.192±.005
(4.88±.13)

.050 (1.27)

.021 (.53)

.154±.005

C

L

(3.91±.13)

.016 (.41)

typ.

TOLERANCE: ±.005 (unless otherwise noted)

SMALL OUTLINE

Anode

1

Cathode

2

NC

3

NC

4

.015±.002

(.38±.05)

.008 (.20)

.020±.004

(.15±.10)

2 plcs.

40°

5° max.

R.010
(.25) max.

(1.49±.13)

8

NC

7

Base

6

Collector

5

Emitter

7°

.058±.005

.125±.005
(3.18±.13)

Lead
Coplanarity
±.0015 (.04)
max.

DESCRIPTION

The IL205AT/206AT/207AT/208AT are optically
coupled pairs with a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL205/6/7/8
come in a standard SOIC-8 small outline package
for surface mounting which makes them ideally
suited for high density applications with limited
space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.

A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV
a higher safety margin compared to the industry

of 70 volts gives

CEO

standard 30 volts.

Maximum Ratings
Emitter

Peak Reverse Voltage .......................................6.0 V

Continuous Forward Current .......................... 60 mA

Power Dissipation at 25°C .............................90 mW

Derate Linearly from 25°C .......................1.2 mW/°C

Detector

Collector-Emitter Breakdown Voltage ................70 V

Emitter-Collector Breakdown Voltage ..................7 V

Collector-Base Breakdown Voltage ...................70 V

Power Dissipation ........................................150 mW

Derate Linearly from 25°C .......................2.0 mW/°C

Package

Total Package Dissipation at 25°C Ambient

(LED + Detector) ...................................... 240 mW

Derate Linearly from 25°C .......................3.3 mW/°C

Storage Temperature .....................–55°C to +150°C

Operating Temperature .................–55°C to +100°C

Soldering Time at 260°C............................... 10 sec.

Semiconductor Group 4–1

Characteristics (T

Emitter

Forward Voltage V
Reverse Current I
Capacitance C

Detector

Breakdown Voltage

Collector-Emitter BV
Emitter-Collector BV

Collector-Emitter V

Dark Current I

Collector-Emitter

Capacitance C

Package

DC Current Transfer CTR

IL205AT 40 80
IL206AT 63 125
IL207AT 100 200
IL208AT 160 320

DC Current Transfer CTR

IL205AT 13 25
IL206AT 22 40
IL207AT 34 60
IL208AT 56 95

Collector-Emitter I

Saturation Voltage V
Isolation Test Voltage V
Equivalent DC

Isolation Voltage 3535 VDC
Capacitance,

Input to Output C
Resistance,

Input to Output R
Switching Time t

Specifications subject to change.

=25°C)

A

Symbol Min. Typ. Max. Unit Condition

F

R

O

CEO
ECO

CEOdark

CE

DC

DC

CE sat
IO

IO

IO

, t

ON

OFF

1.3 1.5 V IF=10 mA

0.1 100 µAVR=6.0 V
25 pF VR=0

70 V IC=100 µA
710 V IE=100 µA

550nA IF=0
10 pF VCE=0

%I

%I

0.4 IF=10 mA

2500 VAC

0.5 pF
100 GΩ

3.0 µsIC=2 mA,

RMS

=10 V,

CE

=10 mA,

F

V

=5 V

CE

=1 mA,

F

V

=5 V

CE

=2.0 mA,

C

=100 Ω,

R

E

=10 V

V

CE

10.95

V

Figure 1. Forward voltage versus forward current

C

C

C

V

V

C

1.4

1.3

1.2

1.1

1.0

0.9

0.8

VF - Forward Voltage - V

0.7

IF - Forward Current - mA

Ta = -55°C

Ta = 25°C

Ta = 85°C

Figure 2. Normalized non-saturated and
saturated CTRce versus LED current

1.5
Normalized to:

Vce = 10 V
IF = 10 mA

1.0

Ta = 25°C

0.5

100101.1

0.0

NCTRce - Normalized CTRce

.1 1 10 100

IF - LED Current - mA

Vce = 5

Vce = 0.4 V

Figure 3. Collector-emitter current versus
LED current

150

Ta = 25°

100

50

Current - mA

Ice - Collector-emitter

0

.1 1 10 100

Figure 5. Normalized collector-base photocurrent
versus LED current

10

IF - LED Current - mA

Normalized to:

Vce = 10

Vce = 0.4 V

Vcb = 9.3 V
IF = 10 mA

1

Ta = 25 °C

.1

NIcb - Normalized Icb

.01

.1 1 10 100

IF - LED Current - mA

Figure 4. Normalized collector-base photocurrent
versus LED current

100

Normalized to:
Vcb = 9.3 V
IF = 1 mA

10

Ta = 25 °C

1

NIcb - Normalized Icb

.1

.1 1 10 100

IF - LED Current - mA

Figure 6. Collector-base photocurrent versus
LED current

1000

Current - µA

Icb - Collector-base

Ta = 25°C
Vcb = 9.3 V

100

10

1

.1

.1110100

IF - LED Current - mA

Figure 7. Collector-emitter leakage current
versus temperature

5

10

4

10

3

10

2

10

1

10

0

10

-1

10

Iceo - Collector-Emitter - nA

-2

10

Ta - Ambient Temperature - °C

Vce = 10V

TYPICAL

100806040200-20

Figure 8. Normalized saturated HFE versus
base current and temperature

2.0

1.5

1.0

0.5

Saturated HFE

NHFE(sat) - Normalized

0.0
1 10 100 1000

70°

25°

Vce = 0.4 V

50°

Ib - Base Current - µA

Normalized to:

Ib = 20µA
Vce = 10
Ta = 25 °C

Semiconductor Group 4–2