Siemens IL205A, IL208A, IL207, IL206A Datasheet
IL205A/206A/207/208A
SMALL OUTLINE SURFACE MOUNT
PHOTOTRANSISTOR OPTOCOUPLER
FEATURES
• High Current Transfer Ratio, IF=10 mA,
VCE=5 V
IL205A, 40–80%
IL206A, 63–125%
IL207A, 100–200%
IL208A, 160–320%
• High BV
• Isolation T est V oltage, 2500 VA C
CEO
, 70 V
RMS
• Industry Standard SOIC-8 Surface Mountable
Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option—Suffix “T”
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Fapor Phase and
IR Reflow Soldering
• Underwriters Lab File #E52744 (Code
Letter P)
DESCRIPTION
The IL205A/206A/207A/208A are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical isolation between input and output. The IL205/
6/7/8 come in a standard SOIC-8 small outline
package for surface mounting which makes them
ideally suited for high density applications with limited space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV
of 70 volts gives
CEO
a higher safety margin compared to the industry
standard 30 volts.
Maximum Ratings
Emitter
Peak Reverse Voltage......................................6.0 V
Continuous Forward Current..........................60 mA
Power Dissipation at 25 °
Derate Linearly from 25 °
C............................90 mW
C ......................1.2 mW/ ° C
Detector
Collector-Emitter Breakdown Voltage...............70 V
Emitter-Collector Breakdown Voltage.................7 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25 °
C ......................2.0 mW/ ° C
Package
Total Package Dissipation at 25 ° C Ambient
(LED + Detector).....................................240 mW
Derate Linearly from 25 °
Storage Temperature ...................–55 °
Operating Temperature ................–55 °
Soldering Time at 260 °
C ......................3.3 mW/ ° C
C to +150 ° C
C to +100 ° C
C.............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
.004 (.10)
.008 (.20)
.021 (.53)
Characteristics (T
=25 ° C)
A
Emitter
Forward Voltage V
Reverse Current I
Capacitance C
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Leakage Current,
Collector-Emitter
Package
DC Current
Transfer
IL205A
IL206A
IL207A
IL208A
DC Current
Transfer
IL205A
IL206A
IL207A
IL208A
Saturation Voltage,
Collector-Emitter
Isolation Test
Voltage
Equivalent DC
Isolation Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time t
5–1
Anode/
.154±.005
C
L
(3.91±.13)
.016 (.41)
.050 (1.27)
typ.
Cathode
Cathode/
.015±.002
(.38±.05)
.008 (.20)
.020±.004
(.15±.10)
2 plcs.
Anode
NC
NC
1
2
3
4
40°
5° max.
R.010
(.25) max.
8
NC
7
Base
6
Collector
5
Emitter
7°
.058±.005
(1.49±.13)
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
Sym Min. Typ. Max. Unit Condition
F
R
O
BV
BV
I
CEO
CTR
CTR
V
CEsat
V
IO
1.3 1.5 V I
0.1 100 µ AV
25 pF V
70
CEO
710
ECO
550nAV
DC
40
63
100
100
DC
13
22
34
56
25
40
60
95
2500 VAC
V
V
%I
80
125
200
320
%I
0.4 I
RMS
= ± 10 mA
F
=6.0 V
R
=0
R
I
=100 mA
C
I
=100 µ A
E
=10 V
CE
=
±
10 mA,
F
V
=5 V
CE
=
±
1 mA,
F
V
=5 V
CE
=2.0 mA,
C
I
=10 mA,
F
3535 VDC
C
R
ON
t
OFF
IO
IO
,
0.5 pF
100 G Ω
3.0
µ sI
=2.0 mA,
C
R
=100 Ω ,
E
V
=10 V
CE
V
V
V
C
C
C
C
V
Figure 1. Forward voltage versus forward current
1.4
1.3
Ta = -55°C
1.2
1.1
Ta = 25°C
1.0
0.9
Ta = 85°C
0.8
VF - Forward Voltage - V
0.7
100101.1
IF - Forward Current - mA
Figure 2. Normalized non-saturated and saturated
CTRce versus LED current
1.5
Normalized to:
Vce = 10 V
IF = 10 mA
1.0
Ta = 25 °C
0.5
0.0
NCTRce - Normalized CTRce
.1 1 10 100
IF - LED Current - mA
Vce = 5
Vce = 0.4
Figure 3. Collector-emitter current ver sus LED current
150
Ta = 25°
100
50
Current - mA
Ice - Collector-emitter
0
.1 1 10 100
IF - LED Current - mA
Vce = 10 V
Vce = 0.4
Figure 4. Normalized collector-base photocurrent versus LED current
100
Normalized to:
Vcb = 9.3 V
IF = 1 mA
10
Ta = 25 °C
1
NIcb - Normalized Icb
.1
.1110100
IF - LED Curr ent - mA
Figure 5. Normalized collector-base photocurrent versus LED current
10
Normalize d to:
Vcb = 9.3 V
IF = 10 mA
1
Ta = 25 °C
.1
NI cb - No rm a liz ed Icb
.01
.1 1 10 100
IF - LED Curren t - mA
Figure 6. Collector-emitter photocurrent versus LED
current
1000
Icb - C o llecto r-base
Ta = 25°C
Vcb = 9. 3 V
10 0
10
Curre nt - µA
1
.1
.1110100
IF - L ED Cur re n t - mA
Figure 7. Collector-emitter photocurrent versus LED
current
5
10
4
10
3
10
2
10
1
10
0
10
-1
10
Iceo - Collector-Emitter - nA
-2
10
Ta - Ambient Temperature - °C
Vce = 10V
TYPICAL
100806040200-20
Figure 8. Base current versus If and HFE
2.0
1.5
1.0
0.5
Saturated HFE
NHFE(sat) - Normalized
0.0
1 10 100 1000
70°
25°
Vce = 0.4
50°
Ib - Base Current - µA
Normalized to:
Ib = 20µA
Vce = 10 V
Ta = 25 °C
5–2
IL205A/206A/207A/208A
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