Siemens HYM368035GS-60, HYM368035S-60 Datasheet

8M × 36-Bit EDO-DRAM Module HYM 368035S/GS-60

Advanced Information

• 8 388 608 words by 36-Bit organization in 2 banks

• Fast access and cycle time

60 ns RAS access time
15 ns CAS access time
104 ns cycle time

• Hyper page mode (EDO) capability

25 ns cycle time

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 7260 mW active
CMOS – 132 mW standby
TTL – 264 mW standby

• CAS-before-RAS refresh

RAS-only-refresh
Hidden-refresh

• 24 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72-17) with 31.75 mm (1250 mil) height

• Utilizes 24 4M x 3 DRAM’s in 300 mil SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write parity applications

• Tin-Lead contact pads (HYM 368035S-60)

• Gold contact pads (HYM 368035GS-60)

Semiconductor Group 1

4.96

HYM 368035S/GS-60

8M × 36-Bit EDO-Module

The HYM 368035S/GS-60 is a 32 MByte EDO-DRAM module organized as 8 388 608 words by 36­Bit in two banks assembled on a 72-pin single-in-line package comprising 24 HYB 5117305BJ
4M × 3 DRAMs in 300 mil wide SOJ-packages mounted together with 24 0.2 µF ceramic decoupling
capacitors on a PC board.

The HYB 5117305BJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.

The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 368035S-60 dictates the use of early write cycles.

Ordering Information
Type Ordering Code Package Description

HYM 368035S-60 Q67100-Q3018 L-SIM-72-17 EDO-DRAM Module

(access time 60 ns)

HYM 368035GS-60 Q67100-Q3019 L-SIM-72-17 EDO-DRAM Module

(access time 60 ns)

Semiconductor Group 2

Pin Configuration

(top view)

HYM 368035S/GS-60

8M × 36-Bit EDO-Module

Pin Names

A0-A10 Address Inputs for

HYM 368035S/GS
DQ0-DQ35 Data Input/Output
CAS0 - CAS3 Column Address Strobe
RAS0 - RAS3 Row Address Strobe
WE Read/Write Input

V

CC

V

SS

Power (+ 5 V)

Ground
PD Presence Detect Pin
N.C. No Connection

Presence Detect Pins

-60
PD0 N.C
PD1 Vss
PD2 N.C.
PD3 N.C.

Semiconductor Group 3