Siemens HYM368020GS-60, HYM368020S-60 Datasheet

8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60

• SIMM modules with 8 388 608 words by 36-bit organization

for PC main memory applications

• Fast access and cycle time

60 ns access time
110 ns cycle time (-60 version)

• Fast page mode capability

40 ns cycle time (-60 version)
Single + 5 V (± 10 %) supply

• Low power dissipation

max. 7260 mW active (-60 version)
max. 6600 mW active (-70 version)
CMOS –132 mW standby
TTL –264 mW standby

• CAS-before-RAS refresh

-only-refresh

RAS
Hidden-refresh

• 24 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.75 mm height

• Utilizes sixteen 4Mx4-DRAMs and eight 4M x 1 DRAMs in 300 mil wide SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write parity applications

• Tin-Lead contact pads (S- version)

• Gold contact pads (GS - version)

Semiconductor Group 1

12.95

HYM 368020S/GS-60

8M × 36-Bit

The HYM 368020S/GS-60 is a 32 MByte DRAM module organized as 8 388 608 words by 36-Bit
in a 72-pin single-in-line package comprising sixteen HYB 5117400BJ 4M × 4 DRAMs and eight
HYB 514100BJ 4M x 1 DRAMs in 300 mil wide SOJ-packages mounted together with 24 0.2 µF
ceramic decoupling capacitors on a PC board.

The HYM 368020S/GS-60 can also be used as a 16 777 360 words by 18-bits dynamic RAM
module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20, … , DQ17 and
DQ35, respectively.

Each HYB 5117400BJ and HYB 514100BJ is described in the data sheet and is fully electrical
tested and processed according to SIEMENS standard quality procedure prior to module assembly.
After assembly onto the board, a further set of electrical tests is performed.

The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 368020S/GS-60/-70 dictates the use of early write cycles.

Ordering Information
Type Ordering Code Package Description

HYM 368020S-60 Q67100-Q985 L-SIM-72-14 DRAM Module

(access time 60 ns)

HYM 368020GS-60 Q67100-Q2007 L-SIM-72-14 DRAM Module

(access time 60 ns)

Semiconductor Group 2

Pin Configuration

VSS 1 DQ0 2
DQ18 3 DQ1 4
DQ19 5 DQ2 6
DQ20 7 DQ3 8
DQ21 9 VCC 10
N.C. 11 A0 12
A1 13 A2 14
A3 15 A4 16
A5 17 A6 18
A10 19 DQ4 20
DQ22 21 DQ5 22
DQ23 23 DQ6 24
DQ24 25 DQ7 26
DQ25 27 A7 28
N.C. 29 VCC 30
A8 31 A9 32
RAS3

33 RAS2 34

DQ26 35 DQ8 36

HYM 368020S/GS-60

8M × 36-Bit

Pin Names

A0-A10 Address Inputs
DQ0-DQ35 Data Input/Output

- CAS3 Column Address Strobe

CAS0

- RAS3 Row Address Strobe

RAS0
WE

V

CC

V

SS

PD Presence Detect Pin
N.C. No Connection

Read/Write Input
Power (+ 5 V)
Ground

DQ17 37 DQ35 38
VSS 39 CAS0
CAS2

41 CAS3 42

43 RAS0 44

CAS1
RAS1

45 N.C. 46

WE

47 N.C. 48
DQ9 49 DQ27 50
DQ10 51 DQ28 52
DQ11 53 DQ29 54
DQ12 55 DQ30 56
DQ13 57 DQ31 58
VCC 59 DQ32 60
DQ14 61 DQ33 62
DQ15 63 DQ34 64
DQ16 65 N.C. 66
PD0 67 PD1 68
PD2 69 PD3 70
N.C. 71 VSS 72

40

Presence Detect Pins

-60
PD0 N.C.
PD1

V

SS

PD2 N.C.
PD3 N.C.

Semiconductor Group 3