Siemens HYM364035GS-60, HYM364035S-60 Datasheet

4M × 36-Bit EDO-DRAM Module HYM 364035S/GS-60

Advanced Information

• 4 194 304 words by 36-Bit organization

• Fast access and cycle time

60 ns RAS access time
15 ns CAS access time
104 ns cycle time

• Hyper page mode (EDO) capability

25 ns cycle time

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 7260 mW active
CMOS – 66 mW standby
TTL – 132 mW standby

• CAS-before-RAS refresh

RAS-only-refresh
Hidden-refresh

• 12 decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72) with 22.9 mm (900 mil) height

• Utilizes 12 4M x 3 DRAM’s in 300 mil SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write parity applications

• Tin-Lead contact pads (HYM 364035S-60)

• Gold contact pads (HYM 364035GS-60)

Semiconductor Group 1

4.96

HYM 364035S/GS-60

4M × 36-Bit EDO-Module

The HYM 364035S/GS-60 is a 16 MByte EDO-DRAM module organized as 4 194 304 words by 36­Bit in a 72-pin single-in-line package comprising twelve HYB 5117305BJ 4M × 3 DRAMs in 300 mil
wide SOJ-packages mounted together with twelve 0.2 µF ceramic decoupling capacitors on a PC
board.

The HYB 5117305BJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.

The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 364035S-60 dictates the use of early write cycles.

Ordering Information
Type Ordering Code Package Description

HYM 364035S-60 Q67100-Q3016 L-SIM-72-13 DRAM Module

(access time 60 ns)

HYM 364035GS-60 Q67100-Q3017 L-SIM-72-13 DRAM Module

(access time 60 ns)

Semiconductor Group 2

Pin Configuration

(top view)

HYM 364035S/GS-60

4M × 36-Bit EDO-Module

Pin Names

A0-A10 Address Inputs for

HYM 364035S/GS
DQ0-DQ35 Data Input/Output
CAS0 - CAS3 Column Address Strobe
RAS0, RAS2 Row Address Strobe
WE Read/Write Input

V

CC

V

SS

Power (+ 5 V)

Ground
PD Presence Detect Pin
N.C. No Connection

Presence Detect Pins

-60

PD0

V

SS

PD1 N.C.
PD2 N.C.
PD3 N.C.

Semiconductor Group 3