Siemens HYM362140GS-70, HYM362140S-60, HYM362140S-70, HYM362140GS-60 Datasheet
Semiconductor Group 601 05.94
2M x 36-Bit Dynamic RAM Module
Advanced Information
HYM 362140S/GS-60/-70
• 2 097 152 words by 36-bit organization
(alternative 4 194 304 words by 18-bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 6952 mW active (-60 version)
max. 6292 mW active (-70 version)
CMOS – 132 mW standby
TTL – 264 mW standby
Ordering Information
Type Ordering Code Package Description
HYM 362140S-60 Q67100-Q955 L-SIM-72-8 DRAM Module
(access time 60 ns)
HYM 362140S-70 Q67100-Q954 L-SIM-72-8 DRAM Module
(access time 70 ns)
HYM 362140GS-60 Q67100-Q957 L-SIM-72-8 DRAM Module
(access time 60 ns)
HYM 362140GS-70 Q67100-Q956 L-SIM-72-8 DRAM Module
(access time 70 ns)
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 12 decoupling capacitors mounted on
substrate
• All inputs, outputs and clocks fully TTL
compatible
• 72 pin Single in-Line Memory Module with
31.75 mm height
• Utilizes eight 1M × 1-DRAMs and sixteen
1M × 4 DRAMs in 300 mil SOJ-packages
• 1024 refresh cycles / 16 ms
• Tin-Lead contact pads (S - version)
• God contact pads (GS - version)
Semiconductor Group 602
HYM 362140S/GS-60/-70
2M x 36-Bit
The HYM 362140S/GS-60/-70 is a 8 M Byte DRAM module organized as 2 097 152 words by
36-bit in a 72-pin single-in-line package comprising eight HYB 511000BJ 1M × 1 DRAMs and
sixteen HYB 514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with
twelve 0.2 µF ceramic decoupling capacitors on a PC board.
The HYM 362140S/GS-60/-70 can also be used as a 4 194 304 words by 18-bits dynamic RAM
module by means of connecting DQ0 and DQ18, DQ1 and DQ19, DQ2 and DQ20, …, DQ17 and
DQ35, respectively.
Each HYB 511000BJ and HYB 514400BJ is described in the data sheet and is fully electrical tested
and processed according to SIEMENS standard quality procedure prior to module assembly. After
assembly onto the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 362140S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Presence Detect Pins
Pin No. Function
A0-A9 Address Inputs
DQ0-DQ35 Data Input/Output
CAS0 - CAS3 Column Address Strobe
RAS0 - RAS3 Row Address Strobe
WE Read/Write Input
V
CC
Power (+ 5 V)
V
SS
Ground
PD Presence Detect Pin
N.C. No Connection
-60 -70
PD0 N.C. N.C.
PD1 N.C. N.C.
PD2 N.C.
V
SS
PD3 N.C. N.C.
Semiconductor Group 603
HYM 362140S/GS-60/-70
2M x 36-Bit
Pin Configuration
(top view)
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