Siemens HYM328000GD-50, HYM328000GD-60 Datasheet

8M × 32-Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE

Preliminary Information

• 8 388 608 words by 32-bit organization

• Fast access and cycle time

50 ns access time

95 ns cycle time (-50 version)

60 ns access time

110 ns cycle time (-60 version)

• Fast page mode capability with

35 ns cycle time (-50 version)
40 ns cycle time (-60 version)

• Single + 3.3 V (± 0.3 V) supply

• Low power dissipation

max. 2016 mW active (-50 version)
max. 1728 mW active (-60 version)

HYM 328000GD-50/-60

LVCMOS – 3.6 mW standby
LVTTL – 28.8 mW standby

• CAS-before-RAS refresh, RAS-only-refresh, Self Refresh

• 4 decoupling capacitors mounted on substrate

• All inputs, outputs and clock fully TTL compatible

• 72 pin, dual read-out, one bank, Small Outline DIMM Module

• Utilizes four 8M × 8 -DRAMs (HYB 3165800T)

• 4096 refresh cycles / 64 ms

• Gold contact pad

Semiconductor Group 187 11.94

HYM328000GD-50/-60

8M x 32 SO-DIMM

The HYM 328000GD -50/-60 is a 32 MByte DRAM module organized as 8 388 608 words by 32-bit
in a 72-pin, dual read-out, small outline package comprising four HYB 3165800T 8M × 8 DRAMs
in 500 mil wide TSOPII-34 - packages mounted together with four 0.2 µF ceramic decoupling
capacitors on a PC board. Each HYB 3165800T is described in the data sheet and is fully
electrically tested and processed according to Siemens standard quality procedure prior to module
assembly. After assembly onto the board, a further set of electrical tests is performed.

The density and speed of the module can be detected by the use of presence detect pins.
These modules are ideal for portable systems applications where high memory capacity is needed.

Ordering Information
Type Ordering Code Package Descriptions

HYM 328000GD -50 on request L-DIM-72-2 50 ns DRAM module
HYM 328000GD -60 on request L-DIM-72-2 60 ns DRAM module

Pin Names

A0-A11 Row Address Input
A0-A10 Column Address Inputs
DQ0 - DQ31 Data Input/Output
RAS0, RAS2 Row Address Strobe
CAS0 - CAS3 Column Address Strobe
WE Read / Write Input
Vcc Power (+3.3 Volt)
Vss Ground
PD1 - PD7 Presence Detect Pins
N.C. No Connection

Presence-Detect and ID-pin Thruth Table *:

Module PD1 PD2 PD3 PD4 PD5 PD6 PD7
HYM 328000GD -50 VSS VSS NC NC VSS VSS NC
HYM 328000GD -60 VSS VSS NC NC NC NC NC

note: PD1 .. PD4 : configuration

PD5 .. PD6 : speed

PD7 : refresh mode (NC = normal refresh)

* acccording to JEDEC letter ballot JC-42.5-95 Item #646/651

Semiconductor Group 188

Pin Configuration

PIN Name PIN NAME PIN NAME PIN NAME

1 VSS 37 DQ16 2 DQ0 38 DQ17
3 DQ1 39 VSS 4 DQ2 40
5 DQ3 41
7 DQ5 43

9 DQ7 45 NC 10 VCC 46 NC
11 PD1 47
13 A1 49 DQ18 14 A2 50 DQ19
15 A3 51 DQ20 16 A4 52 DQ21
17 A5 53 DQ22 18 A6 54 DQ23
19 A10 55 NC 20 NC 56 DQ24
21 DQ8 57 DQ25 22 DQ9 58 DQ26
23 DQ10 59 DQ28 24 DQ11 60 DQ27
25 DQ12 61 VCC 26 DQ13 62 DQ29
27 DQ14 63 DQ30 28 A7 64 DQ31
29 A11 65 NC 30 VCC 66 PD2
31 A8 67 PD3 32 A9 68 PD4
33 NC 69 PD5 34
35 DQ15 71 PD7 36 NC 72 VSS

Front Side

CAS2 6 DQ4 42 CAS3
CAS1 8 DQ6 44 RAS0

WRITE 12 A0 48 NC

RAS2 70 PD6

Back Side

CAS0

HYM328000GD-50/-60

8M x 32 SO-DIMM

Pin2

Pin72

Pin1

Pin71

Semiconductor Group 189