Siemens HYM324000GD-50, HYM324000GD-60 Datasheet

4M × 32-Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE

Preliminary Information

• 4 0194 034 words by 32-bit organization

• Fast access and cycle time

50 ns access time

95 ns cycle time (-50 version)

60 ns access time

110 ns cycle time (-60 version)

• Fast page mode capability with

35 ns cycle time (-50 version)
40 ns cycle time (-60 version)

• Single + 3.3 V (± 0.3 V) supply

• Low power dissipation

max. 1008 mW active (-50 version)
max. 864 mW active (-60 version)

HYM 324000GD-50/-60

LVCMOS – 1.8 mW standby
TTL – 14.4 mW standby

• CAS-before-RAS refresh, RAS-only-refresh. Self Refresh

• 2 decoupling capacitors mounted on substrate

• All inputs, outputs and clock fully TTL compatible

• 72 pin, dual read-out, one bank, Small Outline DIMM Module

• Utilizes two 4M × 16 -DRAMs (HYB 3165160T)

• 4096 refresh cycles / 64 ms

• Gold contact pad

Semiconductor Group 181 11.94

HYM324000GD-50/-60

4M x 32 SO-DIMM

The HYM 324000GD -50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 32-bit
in a 72-pin, dual read-out, small outline package comprising two HYB 3165160T 4M× 16 DRAMs
in 500 mil wide TSOPII-54 - packages mounted together with two 0.2 µF ceramic decoupling
capacitors on a PC board. Each HYB 3165160T is described in the data sheet and is fully
electrically tested and processed according to Siemens standard quality procedure prior to module
assembly. After assembly onto the board, a further set of electrical tests is performed.

The density and speed of the module can be detected by the use of presence detect pins.
These modules are ideal for portable systems applications where high memory capacity is needed.

Ordering Information
Type Ordering Code Package Descriptions

HYM 324000GD -50 on request L-DIM-72-1 50 ns DRAM module
HYM 324000GD -60 on request L-DIM-72-1 60 ns DRAM module

Pin Names

A0-A11 Row Address Input
A0-A9 Column Address Inputs
DQ0 - DQ31 Data Input/Output
RAS0, RAS2 Row Address Strobe
CAS0 - CAS3 Column Address Strobe
WE Read / Write Input
Vcc Power (+3.3 Volt)
Vss Ground
PD1 - PD7 Presence Detect Pins
N.C. No Connection

Presence-Detect and ID-pin Thruth Table *):

Module PD1 PD2 PD3 PD4 PD5 PD6 PD7
HYM 324000GD -50 NC NC VSS NC VSS VSS NC
HYM 324000GD -60 NC NC VSS NC NC NC NC

note: PD1 .. PD4 : configuration

PD5 .. PD6 : speed

PD7 : refresh mode (NC = normal refresh)
*) according to JEDEC letter ballot JC-42.5-95 Item #646/651

Semiconductor Group 182