Siemens HYM322160GS-60, HYM322160GS-70, HYM322160S-60, HYM322160S-70 Datasheet
Semiconductor Group 551 09.94
2M x 32-Bit Dynamic RAM Module
Advanced Information
HYM 322160S/GS-60/-70
• 2 097 152 words by 32-Bit organization
(alternative 4 194 304 words by 16-Bit)
• Fast access and cycle time
60 ns access time
110 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode capability with
40 ns cycle time (-60 version)
45 ns cycle time (-70 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 4840 mW active (-60 version)
max. 4400 mW active (-70 version)
CMOS – 88 mW standby
TTL – 176 mW standby
Ordering Information
Type Ordering Code Package Description
HYM 322160S-60 Q67100-Q2014 L-SIM-72-11 DRAM Module
(access time 60 ns)
HYM 322160S-70 Q67100-Q2015 L-SIM-72-11 DRAM Module
(access time 70 ns)
HYM 322160GS-60 Q67100-Q2016 L-SIM-72-11 DRAM Module
(access time 60 ns)
HYM 322160GS-70 Q67100-Q2017 L-SIM-72-11 DRAM Module
(access time 70 ns)
• CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
• 8 decoupling capacitors mounted on
substrate
• All inputs, outputs and clocks fully TTL
compatible
• 72 pin double-sided Single in-Line Memory
Module with 25.4 mm (1000 mil) height
• Utilizes sixteen 1M × 4 DRAMs in 300 mil
SOJ packages
• 1024 refresh cycles / 16 ms
• Tin-Lead contact pads (S - version)
• Gold contact pads (GS - version)
Semiconductor Group 552
HYM 322160S/GS-60/-70
2M x 32-Bit
The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by
32-Bit in a 72-pin single-in-line package comprising sixteen HYB514400BJ 1M × 4 DRAMs in 300
mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC
board.
The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM
module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, …, DQ15 and
DQ31, respectively.
Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed
according to SIEMENS standard quality procedure prior to module assembly. After assembly onto
the board, a further set of electrical tests is performed.
The speed of the module can be detected by the use of four presence detect pins.
The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles.
Pin Definitions and Functions
Presence Detect Pins
Pin No. Function
A0-A9 Address Inputs
DQ0-DQ31 Data Input/Output
CAS0 - CAS3 Column Address Strobe
RAS0 - RAS3 Row Address Strobe
WE Read/Write Input
V
CC
Power (+ 5 V)
V
SS
Ground
PD Presence Detect Pin
N.C. No Connection
-60 -70
PD0 N.C. N.C.
PD1 N.C. N.C.
PD2 N.C.
V
SS
PD3 N.C. N.C.
Semiconductor Group 553
HYM 322160S/GS-60/-70
2M x 32-Bit
Pin Configuration
(top view)
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