Siemens CGY96 Datasheet
GaAs MMIC
l
Power amplifier for GSM class 4 phones
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3.2 W (35dBm) output power at 3.5 V
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Overall power added efficiency 50 %
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Fully integrated 3 stage amplifier
l
Power ramp control
l
Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
CGY 96
Type Marking Ordering code
Package
(taped)
CGY 96 CGY 96 Q62702G63 MW 16
Maximum ratings
Characteristics Symbol max. Value Unit
Positive supply voltage V
Supply current
Channel temperature
Storage temperature
Pulse peak power dissipation
T
T
P
Pulse
duty cycle 12.5%, ton=0.577ms
Total power dissipation
(Ts ≤ 80 °C)
P
Ts: Temperature at soldering point
D
I
D
Ch
stg
tot
9V
4A
150 °C
-55...+150 °C
tbd W
tbd W
Thermal Resistance
Characteristics Symbol max. Value Unit
Channel-soldering point
Siemens Aktiengesellschaft 1 23.07.1998
Semiconductor Group 1 1998-11-01
HL HF PE GaAs
R
thChS
tbd K/W
Functional block diagramm:
CGY 96
VD1(1) VD2(2)
GND1(14,15)
Vneg(13)
RFin(16)
Vcontrol(8)
control circuit
current
Pin # Name Configuration
1
2
VD1
VD2
Drain voltage 1st stage
Drain voltage 2nd stage
CGY96
VD3/RFout(4,5,6)
GND2(17)
3
4,5,6
7
8
9,10,11,
12
13
14,15
16
(17)
n.c.
VD3 /
RFout
n.c.
Vcontrol
n.c.
Vneg
Gnd1
RFin
GND2
Drain 3rd stage and RF-output
Control voltage for power ramping
-
negative voltage for current control circuit
Ground pin 1st stage
RF Input
Ground (backside of MW16 package)
Siemens Aktiengesellschaft 2 23.07.1998
Semiconductor Group 2 1998-11-01
HL HF PE GaAs
CGY 96
Electrical characteristics
(TA = 25°C, Vneg=-5V, Vcontrol=2.2V; duty cycle 12.5%, ton=577µsec)
Characteristics Symbol min typ max Unit
Frequency range
Supply current
Pin=0dBm
Supply current neg. voltage gener.
Vaux=3.5V
Gain (small signal)
Power gain
Pin=0dBm
Output Power
Pin=0dBm, Vcontrol=2.0V.....2.5V)
Overall Power added Efficiency
Pin=0dBm
Dynamic range output power
Vcontrol = 0.2...2.2V
Harmonics
Pin=0dBm
Noise Power in RX
(935-960MHz)
Pin=0dBm, Pout=35dBm, 100kHz
RBW
Stability
all spurious outputs < -60dBc,
VSWR load, all phase angles
Input VSWR - 1.7 : 1 - -
f
I
D
I
AUX
G
G
P
P
OUT
η
H(2f0)
H(3f0)
H(4f0)
N
RX
880 - 915 MHz
-1.8- A
-10-mA
-40-dB
-35-dB
-35-dBm
-50-%
-80-dB
-
-
-
-40
-43
-44
-
-
-
dBc
dBc
dBc
--81-dBm
- 10 : 1 - -
Siemens Aktiengesellschaft 3 23.07.1998
Semiconductor Group 3 1998-11-01
HL HF PE GaAs
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