Siemens CGY92 Datasheet

GaAs MMIC CGY92

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Datasheet

*Power amplifier for GSM or AMPS application
*Fully integrated 2 stage amplifier
*Operating voltage range: 2.7 to 6 V
*Overall power added efficiency 45 %
*Input matched to 50 ohms, simple output match

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Type Marking Ordering code

(taped)

Package

1)

CGY 92 CGY 92 Q68000-A8884 MW 12

Maximum ratings
Characteristics Symbol max. Value Unit

Positive supply voltage V
Negative supply voltage V
Supply current
Channel temperature
Storage temperature

T
T

RF input power
Pulse peak power dissipation

duty cycle 12.5%, ton=0.577ms

P

Pulse

I

P

D
G

D
Ch
stg

in

9V

-6 V
2A

150 °C

-55...+150 °C
25 dBm

9W

Total power dissipation

Ts: Temperature at soldering point

(CW, Ts ≤ 81°C)

P

tot

5W

Thermal Resistance

Channel-soldering point

1)

Plastic body identical to SOT 223, dimensions see page 14

Siemens Aktiengesellschaft pg. 1/14 17.10.95
HL EH PD 21

R

thChS

≤14

K/W

GaAs MMIC CGY92

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Functional block diagramm:

Control circuit:

VTR (2)

Pin (8)

Control

Circuit

VD1 (7) VD2 (12)VG (1)

Pout (12)

The drain current ID of the CGY 92 is
adjusted by the internal control circuit.
Therefore a negativ voltage (-4V...-6V)
has to be supplied at VG. For transmit
operation VTR must be set to 0V. During
receive operation VTR should be dis­connected (shut off mode).

GND1 (6, 9) GND2

Pin # Configuration

1
2

3,4,5,10

6,9

7

8
11
12

VG

VTR
GND 2
GND 1

VD1

RFin

GND 3

VD2, RFout

Negative voltage at control circuit (-4V...-6V)
Control voltage for transmit mode (0V) or receive mode (open)
RF and DC ground of the 2nd stage
RF and DC ground of the 1st stage
Positive drain voltage of the 1st stage
RF input power
Ground for internal output matching
Positive drain voltage of the 2nd stage, RF output power

DC characteristics

(3, 4, 5, 10)

GND3 (11)

Characteristics Symbol Conditions min typ max Unit

Drain current stage 1
stage 2
Drain current with

active current control
Transconductance
(stage 1 and 2)
Pinch off voltage

Siemens Aktiengesellschaft pg. 2/14 17.10.95
HL EH PD 21

IDSS1
IDSS2
ID

gfs1
gfs2
Vp

VD=3V, VG=0V, VTR n.c. 0.6 0.9 1.2 A

2.4 3.5 4.8 A

VD=3V, VG=-4V, VTR=0V - 1.0 - A

VD=3V, ID=350mA 0.28 0.32 - S
VD=3V, ID=700mA 1.1 1.3 - S

VD=3V, ID<500µA

-3.8 -2.8 -1.8 V

(all stages)

GaAs MMIC CGY92

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Electrical characteristics

(T

= 25°C , f=0.9 GHz, ZS=ZL=50 Ohm, VD=3.0V, VG=-4V, VTR pin connected to

A

ground, unless otherwise specified, pulsed with a duty cycle of 10%, ton=0.33ms)

Characteristics Symbol min typ max Unit

Supply current

Pin=10dBm

Negative supply current

(normal operation)

Shut-off current

VTR n.c.

Negative supply current

(shut off mode, VTR pin n.c.)

Small signal gain

Pin = -5dBm

Power gain

VD=3V; Pin=10dBm

Output Power

VD=3V; Pin=10dBm

Output Power

VD=3.6V; Pin=10dBm

Output Power

VD=5V; Pin=10dBm

Overall Power added Efficiency

VD=3V; Pin=10dBm

Overall Power added Efficiency

VD=3.6V; Pin=10dBm

Overall Power added Efficiency

VD=5V; Pin =10dBm

Harmonics

VD=3V; (P

Harmonics

VD=5V; (P

Input VSWR

(Pin=10dBm)

=32dBm)

out

(Pin=10dBm)

=35dBm)

out

VD=3.0V;

2f

3f

3f

2f

0

0

0

0

I

DD

I
I
I

P
P
P

G
D
G

G
G

o
o
o

η

η

η

-

-

-

-

- 1.05 - A

-2-mA

- 400 - µA

-10-µA

27.0 29.0 - dB

21.0 21.8 - dB

31.0 31.8 - dBm

32.3 33.1 - dBm

34.0 35.0 - dBm

43 48 - %

41 46 - %

40 45 - %

-

-

-

-

-46

-37

-48

-38

-

-

-

-

- - 1.7 : 1 2.0 : 1 -

dBc
dBc
dBc
dBc

Third order intercept point

VD=3V; pulsed with a duty cycle of 10%;
f

=900.00MHz; f2=900.20MHz;

1

IP

3

- 40 - dBm

Third order intercept point

VD=4.8V; pulsed with a duty cycle of 10%;

=900.00MHz; f2=900.20MHz;

f

1

IP

3

- 45 - dBm

Siemens Aktiengesellschaft pg. 3/14 17.10.95
HL EH PD 21

GaAs MMIC CGY92

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DC-ID(VG) characteristics - typical values of stage 1, VD=3V

1,2

High current
Medium c urrent
Low c u rr ent

-5 -4,5 -4 -3,5 -3 -2,5 -2 -1,5 -1 -0,5 0

VG [V]

1

0,8

0,6

0,4

0,2

0

ID [A]

DC-Output characteristics - typical values of stage 1

0,8

VG=-0.25 V

0,7

0,6

0,5

0,4

ID [A]

0,3

0,2

0,1

0

0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6

-0.50 V

-0.75 V

Ptot=1.25 W

-1.00 V

-1.25 V

-1.50 V

-1.75 V

VD [V]

-2.00 V

-2.25 V

Siemens Aktiengesellschaft pg. 4/14 17.10.95
HL EH PD 21

GaAs MMIC CGY92

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DC-ID(VG) characteristics - typical values of stage 2, VD=3V

4,5

High current
Medium c urrent
Low c u rr ent

-5 -4,5 -4 -3,5 -3 -2,5 -2 -1,5 -1 -0,5 0

VG [V]

DC-Output characteristics - typical values of stage 2

3

4

3,5

ID [A]

3

2,5

2

1,5

1

0,5

0

2,5

1,5

ID [A]

2

VG=-0.50 V

-0.75 V

-1.00 V

Ptot=3.75 W

-1.25 V

-1.50 V

1

-1.75 V

-2.00 V

0,5

0

0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6

VD [V]

-2.25 V

-2.50 V

Siemens Aktiengesellschaft pg. 5/14 17.10.95
HL EH PD 21