Siemens CGY81 Datasheet
GaAs MMIC
l
Tri mode power amplifier for AMPS/ CDMA /TDMA
portable cellular phones
l
31 dBm saturated output power @ PAE=55% typ.
29 dBm linear output power@ PAE=40% typ.
l
Fully integrated 2 stage amplifier
l
Power ramp control
l
Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
CGY 81
Type Marking Ordering code
Package
(taped)
CGY 81 CGY 81 Q627002G0078 MW 16
Maximum Ratings
Characteristics Symbol max. Value Unit
Positive supply voltage V
Supply current
Channel temperature
Storage temperature
Pulse peak power dissipation
Total power dissipation
(Ts ≤ 80 °C)
T
T
P
Pulse
P
Ts: Temperature at soldering point
D
I
D
Ch
stg
tot
9V
4A
150 °C
-55...+150 °C
tbd W
Tbd W
Thermal Resistance
Characteristics Symbol max. Value Unit
Channel-soldering point
Siemens Aktiengesellschaft 1 23.07.98
Semiconductor Group 1 1998-11-01
R
thChS
11 K/W
HL HF PE GaAs 1/Fo
Functional Block Diagram:
CGY 81
Vneg
Vcon
RF IN
Control
Circuit
Pin Configuration:
Pin # Name Configuration
1
2
VD Cell
n. c.
Drain voltage preamplifier stage
VD1
RF OUT
3
4
5
6
7
8
9
10
11
12
13
14
15
16
RF IN Cell
n. c.
Vneg
Vcon
n. c.
n. c.
n. c.
n. c.
RF out
RF out
RF out
RF out
n. c.
n. c.
RF IN
Negative voltage
Control voltage
RF out / drain voltage final stage
RF out / drain voltage final stage
RF out / drain voltage final stage
RF out / drain voltage final stage
Siemens Aktiengesellschaft 2 23.07.98
Semiconductor Group 2 1998-11-01
HL HF PE GaAs 1/Fo
CGY 81
Electrical Characteristics
(TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, Idq=300mA, unless otherwise specified )
Characteristics Symbol min typ max Unit
Frequency range
Duty cycle
AMPS output power
TDMA output power
AMPS gain at max. output
TDMA gain at max. output
tON/t
P
P
G
G
f
OFF
824 849 MHz
100 %
31,5 dBm
30 dBm
24 dB
27 dB
CDMA output power P 28 dBm
CDMA gain at max. output G 28 dB
Power ramping characte ristic
Full output power
Pinch off
Adjacent Channel Power CDMA
900kHz offset
1.98 MHz offset
Adjacent channel power TDMA
adjacent
alternate
V
contr
P
adj/Pmain
P
adj/Pmain
2.5
0.5
-45
-54
-28
–45
-45
V
dBc @
30kHz
dBc @
30kHz
2nd alternate
AMPS efficiency PAE 55 %
TDMA DC to RF efficiency
PAE
%
@Padj=-26dBc
at max. output
CDMA DC to RF efficiency
PAE
40
%
@Padj=-42dBc
at max. output
at Pout=10 dBm ( Iq set to 100mA )
Receive band noise power density
P
RX
35
8
-137 dBm/Hz
( 869 to 894 MHz )
Drain supply voltage range VD 2.7 3.5 4.0 V
Negative supply voltage range Vneg -5.0 -7 V
Standby current @Vcon=0V I
pwr dwn
Quiescent current I
Current consumption at V
Current consumption at V
Contr
NEG
I
Control
I
Operating temperature range
Q
NEG
υ
-30 +85 °C
500
µA
300 mA
2mA
2mA
Siemens Aktiengesellschaft 3 23.07.98
Semiconductor Group 3 1998-11-01
HL HF PE GaAs 1/Fo
Power on sequence:
1. connect negative voltage to PA
2. connect control voltage to PA
3. turn on Vd
4. turn on Pin
To switch off the device please use reverse sequence.
Application Circuit:
CGY 81
Vd
RFin
Vcon
Vaux
CLK
0
3
u
C
1
0
4
u
C
1
0
5
u
C
1
0
6
u
C
1
p
7
0
0
C
1
C2
IC1
100p
L3
9
1
C
8n2
p
3
C12
1
1
C
10n
n
0
1
1
VD1
2
NC2
3
RFin
4
NC4
5
Vneg
6
Vcon
7
NC7
8
NC8
GND (backside MW16)
CGY81
VD2/RFout4
VD2/RFout3
VD2/RFout2
VD2/RFout1
17
NC16
NC15
NC10
NC9
16
15
14
13
12
11
10
9
H
2
n
L
3
3
C10
RFout
100p
Q
8
H
C
6
p
5
Q
9
H
C
p
0
1
C16
4
n
1
3
3
C
C13
9
1
k
R
3
V2
1n0
R
2
0
R
8
6
1
L
BC848B
H
u
0
1
C15
1n0
3
V1
33n
1
BAS 40-04
2
Evaluation Board Parts List
Part Type Position Description Manufacturer Part Number
Capacitor C1 3.9pF 0402 Siemens
Capacitor C2, C7, C10 100pF 0402 Siemens
Capacitor C3, C4, C5, C6 1uF 1206 Siemens
Capacitor C8 5.6pF 0603 HQ AVX 06035J5R6GBT
Capacitor C9 10pF 0603 HQ AVX 06035J100GBT
Capacitor C11, C12 10 nF 0402 Siemens
Capacitor C13, C15 1 nF 0402 Siemens
Siemens Aktiengesellschaft 4 23.07.98
Semiconductor Group 4 1998-11-01
HL HF PE GaAs 1/Fo
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