Siemens BUZ70L Datasheet

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

BUZ 70 L

Pin 1 Pin 2 Pin 3

G D S

Type

V

DS

I

D

R

DS(on)

Package Ordering Code

BUZ 70 L 60 V 12 A 0.15 Ω TO-220 AB C67078-S1325-A2

Maximum Ratings
Parameter Symbol Values Unit

Continuous drain current

T

= 33 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche current,limited by

T

jmax

Avalanche energy,periodic limited by
Avalanche energy, single pulse

I

= 12 A,

D

L

= 48.6 µH,

V

DD

T

= 25 V,

= 25 °C

j

R

GS

= 25

Ω

Gate source voltage
Gate-source peak voltage,aperiodic

T

jmax

I

D

I

Dpuls

I

AR

E

AR

E

AS

V

GS

V

gs

A

12

48
12

1 mJ

6

±

14 V

±

20

Power dissipation

T

= 25 °C

C

Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient

P

T
T
R
R

tot

j
stg

thJC
thJA

40

-55 ... + 150 °C

-55 ... + 150

≤

3.1 K/W

75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group

1 07/96

W

BUZ 70 L

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V
V

DS
DS

= 60 V,
= 60 V,

V
V

GS
GS

= 0 V,
= 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-resistance

V

= 5 V,

GS

I

= 6 A

D

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

60 - -

1.2 1.6 2

-

-

0.1
10

1
100

- 10 100

- 0.12 0.15

V

µA

nA

Ω

Semiconductor Group 2 07/96

BUZ 70 L

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 6 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V

= 30 V,

DD

V

= 5 V,

GS

I

= 3 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

2 7.5 -

pF

- 420 560

- 160 250

- 60 110
ns

R

= 50 Ω

GS

Rise time

V
R

DD

GS

= 30 V,

= 50 Ω

V

= 5 V,

GS

Turn-off delay time

V
R

DD

GS

= 30 V,

= 50 Ω

V

= 5 V,

GS

Fall time

V
R

DD

GS

= 30 V,

= 50 Ω

V

= 5 V,

GS

I

= 3 A

D

I

= 3 A

D

I

= 3 A

D

t

r

t

d(off)

t

f

- 15 25

- 55 80

- 45 60

- 40 55

Semiconductor Group 3 07/96