Siemens BUZ3L Datasheet

Semiconductor Group

1 07/96

BUZ 31 L

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Pin 1 Pin 2 Pin 3

G D S

Type

V

DS

I

D

R

DS(on)

Package Ordering Code

BUZ 31 L 200 V 13.5 A 0.2 Ω TO-220 AB C67078-S1322-A2

Maximum Ratings
Parameter Symbol Values Unit

Continuous drain current

T

C

= 28 °C

I

D

13.5

A

Pulsed drain current

T

C

= 25 °C

I

Dpuls

54

Avalanche current,limited by

T

jmax

I

AR

13.5

Avalanche energy,periodic limited by

T

jmax

E

AR

9 mJ

Avalanche energy, single pulse

I

D

= 13.5 A,

V

DD

= 50 V,

R

GS

= 25

Ω

L

= 1.65 mH,

T

j

= 25 °C

E

AS

200

Gate source voltage

V

GS

±

14 V

Gate-source peak voltage,aperiodic

V

gs

±

20

Power dissipation

T

C

= 25 °C

P

tot

75

W

Operating temperature

T

j

-55 ... + 150 °C

Storage temperature

T

stg

-55 ... + 150

Thermal resistance, chip case

R

thJC

≤

1.67 K/W

Thermal resistance, chip to ambient

R

thJA

75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Semiconductor Group 2 07/96

BUZ 31 L

Electrical Characteristics, at

T

j

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS

= 0 V,

I

D

= 0.25 mA,

T

j

= 25 °C

V

(BR)DSS

200 - -

V

Gate threshold voltage

V

GS

=

V

DS, ID

= 1 mA

V

GS(th)

1.2 1.6 2

Zero gate voltage drain current

V

DS

= 200 V,

V

GS

= 0 V,

T

j

= 25 °C

V

DS

= 200 V,

V

GS

= 0 V,

T

j

= 125 °C

I

DSS

-

­ 10

0.1

100

1

µA

Gate-source leakage current

V

GS

= 20 V,

V

DS

= 0 V

I

GSS

- 10 100

nA

Drain-Source on-resistance

V

GS

= 5 V,

I

D

= 7 A

R

DS(on)

- 0.16 0.2

Ω

Semiconductor Group 3 07/96

BUZ 31 L

Electrical Characteristics, at

T

j

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

≥

2

*

I

D * RDS(on)max, ID

= 7 A

g

fs

5 12 -

S

Input capacitance

V

GS

= 0 V,

V

DS

= 25 V, f = 1 MHz

C

iss

- 1200 1600

pF

Output capacitance

V

GS

= 0 V,

V

DS

= 25 V, f = 1 MHz

C

oss

- 200 300

Reverse transfer capacitance

V

GS

= 0 V,

V

DS

= 25 V, f = 1 MHz

C

rss

- 100 150

Turn-on delay time

V

DD

= 30 V,

V

GS

= 5 V,

I

D

= 3 A

R

GS

= 50 Ω

t

d(on)

- 25 40

ns

Rise time

V

DD

= 30 V,

V

GS

= 5 V,

I

D

= 3 A

R

GS

= 50 Ω

t

r

- 80 120

Turn-off delay time

V

DD

= 30 V,

V

GS

= 5 V,

I

D

= 3 A

R

GS

= 50 Ω

t

d(off)

- 210 270

Fall time

V

DD

= 30 V,

V

GS

= 5 V,

I

D

= 3 A

R

GS

= 50 Ω

t

f

- 65 85