Siemens BUZ385 Datasheet
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• FREDFET
BUZ 385
Pin 1 Pin 2 Pin 3
G D S
Type
V
DS
I
D
R
DS(on
)
Package Ordering Code
BUZ 385 500 V 9 A 0.8 Ω TO-218 AA C67078-A3210-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
Drain-gate voltage
R
= 20 k
GS
Ω
Continuous drain current
T
= 25 °C
C
Pulsed drain current
T
= 25 °C
C
Gate source voltage
Power dissipation
T
= 25 °C
C
Operating temperature
V
DS
V
DGR
I
D
I
Dpuls
V
GS
P
tot
T
j
500 V
500
A
9
36
± 20 V
W
125
-55 ... + 150 °C
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
T
R
R
stg
thJC
thJA
-55 ... + 150
≤
1 K/W
75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
Semiconductor Group 1 07/96
BUZ 385
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 25 °C
j
Gate threshold voltage
=
V
GS
V
DS, ID
= 1 mA
Zero gate voltage drain current
V
V
DS
DS
= 500 V,
= 500 V,
V
V
GS
GS
= 0 V,
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
500 - -
2.1 3.5 4
-
-
20
100
250
1000
- 10 100
V
µA
nA
Drain-Source on-resistance
V
= 10 V,
GS
I
= 6.5 A
D
R
DS(on)
Ω
- 0.6 0.8
Semiconductor Group 2 07/96
BUZ 385
Electrical Characteristics, at
T
= 25°C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
≥
V
2
DS
I
*
D * RDS(on)max, ID
= 6.5 A
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
= 30 V,
DD
V
GS
= 10 V,
I
= 2.8 A
D
g
fs
C
iss
C
oss
C
rss
t
d(on)
S
2.7 6.7 pF
- 3800 4900
- 250 400
- 100 170
ns
R
GS
= 50
Ω
Rise time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V
R
DD
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
I
= 2.8 A
D
I
= 2.8 A
D
I
= 2.8 A
D
t
r
t
d(off)
t
f
- 50 75
- 80 120
- 330 430
- 110 140
Semiconductor Group 3 07/96
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