Siemens BUP402 Datasheet
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
BUP 402
• Avalanche rated
Pin 1 Pin 2 Pin 3
G C E
Type
V
CE
I
C
Package Ordering Code
BUP 402 600V 36A TO-220 AB C67078-A4405-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Emitter-collector voltage
Collector-gate voltage
R
= 20 kΩ
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 90 °C
C
V
V
V
V
I
C
CE
EC
CGR
GE
600 V
600
± 20
A
36
22
Pulsed collector current,
T
= 25 °C
C
T
= 90 °C
C
t
= 1 ms
p
Avalanche energy, single pulse
I
= 20 A,
C
L
= 200 µH,
V
CC
T
= 50 V,
= 25 °C
j
R
GE
= 25 Ω
Power dissipation
T
= 25 °C
C
Chip or operating temperature
Storage temperature
Semiconductor Group
I
Cpuls
72
40
E
AS
mJ
42
P
tot
W
150
T
j
T
stg
- 55 ... + 150 °C
- 55 ... + 150
1 Dec-02-1996
BUP 402
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
R
thJC
≤ 0.83 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
=
GE
V
CE, IC
= 0.5 mA,
T
= 25 °C
j
Collector-emitter saturation voltage
V
V
V
V
GE
GE
GE
GE
= 15 V,
= 15 V,
= 15 V,
= 15 V,
I
= 20 A,
C
I
= 20 A,
C
I
= 40 A,
C
I
= 40 A,
C
T
= 25 °C
j
T
= 125 °C
j
T
= 25 °C
j
T
= 125 °C
j
Zero gate voltage collector current
V
= 600 V,
CE
V
GE
= 0 V,
T
= 25 °C
j
V
GE(th)
V
CE(sat)
I
CES
4.5 5.5 6.5
-
-
-
-
2.1
2.2
3
3.3
2.7
2.8
-
-
- - 100
V
µA
Gate-emitter leakage current
V
= 25 V,
GE
V
CE
= 0 V
AC Characteristics
Transconductance
V
= 20 V,
CE
I
= 20 A
C
Input capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Output capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Reverse transfer capacitance
V
= 25 V,
CE
Semiconductor Group
V
= 0 V, f = 1 MHz
GE
I
GES
nA
- - 100
g
fs
S
4 - -
C
iss
pF
- 1040 1400
C
oss
- 115 175
C
rss
- 66 110
2 Dec-02-1996
BUP 402
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
Turn-on delay time
V
R
CC
Gon
= 300 V,
= 47 Ω
V
GE
Rise time
V
R
CC
Gon
= 300 V,
= 47
Ω
V
GE
Turn-off delay time
V
R
CC
Goff
= 300 V,
= 47
Ω
V
GE
Fall time
V
R
CC
Goff
= 300 V,
= 47
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
I
= 20 A
C
I
= 20 A
C
I
= 20 A
C
I
= 20 A
C
t
d(on)
t
r
t
d(off)
t
f
T
= 125 °C
j
- 40 60
- 70 110
- 250 330
- 500 680
ns
Semiconductor Group
3 Dec-02-1996
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