Siemens BUP401 Datasheet

IGBT

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Avalanche rated

BUP 401

Pin 1 Pin 2 Pin 3

G C E

Type

V

CE

I

C

Package Ordering Code

BUP 401 600V 29A TO-220 AB C67078-A4404-A2

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage
Collector-gate voltage

R

= 20 k

GE

Ω

Gate-emitter voltage
DC collector current

T

= 25 °C

C

T

= 90 °C

C

Pulsed collector current,

T

= 25 °C

C

T

= 90 °C

C

t

= 1 ms

p

Avalanche energy, single pulse

V

CE

V

CGR

V

GE

I

C

I

Cpuls

E

AS

600 V

600
± 20

A
29
18

56
34

mJ

I

= 15 A,

C

L

= 200 µH,

V

CC

T

= 50 V,

= 25 °C

j

R

GE

= 25

Power dissipation

T

= 25 °C

C

Chip or operating temperature
Storage temperature

Semiconductor Group

Ω

24

P

tot

W

125

T

j

T

stg

-55 ... + 150 °C

-55 ... + 150

1 Jul-31-1996

BUP 401

Maximum Ratings
Parameter Symbol Values Unit

DIN humidity category, DIN 40 040 - E ­IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case

R

thJC

≤

1 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Gate threshold voltage

V

=

GE

V

CE, IC

= 0.35 mA

Collector-emitter saturation voltage

V
V
V
V

GE
GE
GE
GE

= 15 V,
= 15 V,
= 15 V,
= 15 V,

I

= 15 A,

C

I

= 15 A,

C

I

= 30 A,

C

I

= 30 A,

C

T

= 25 °C

j

T

= 125 °C

j

T

= 25 °C

j

T

= 125 °C

j

Zero gate voltage collector current

V

GE(th)

V

CE(sat)

I

CES

4.5 5.5 6.5

-

-

-

-

2.1

2.2
3

3.3

2.7

2.8

-

-

V

µA

V

= 600 V,

CE

V

GE

= 0 V,

T

= 25 °C

j

Gate-emitter leakage current

V

= 25 V,

GE

V

CE

= 0 V

AC Characteristics

Transconductance

V

= 20 V,

CE

I

= 15 A

C

Input capacitance

V

= 25 V,

CE

V

= 0 V, f = 1 MHz

GE

Output capacitance

V

= 25 V,

CE

V

= 0 V, f = 1 MHz

GE

Reverse transfer capacitance

V

= 25 V,

CE

Semiconductor Group

V

= 0 V, f = 1 MHz

GE

- - 100

I

GES

nA

- - 100

g

fs

S

3 - -

C

iss

pF

- 800 1100

C

oss

- 85 130

C

rss

- 52 80

2 Jul-31-1996

BUP 401

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Switching Characteristics, Inductive Load at

Turn-on delay time

V
R

CC

Gon

= 300 V,

= 68

Ω

V

GE

Rise time

V
R

CC

Gon

= 300 V,

= 68 Ω

V

GE

Turn-off delay time

V
R

CC

Goff

= 300 V,

= 68 Ω

V

GE

Fall time

V
R

CC

Goff

= 300 V,

= 68 Ω

V

GE

= 15 V,

= 15 V,

= -15 V,

= -15 V,

I

= 15 A

C

I

= 15 A

C

I

= 15 A

C

I

= 15 A

C

t

d(on)

t

r

t

d(off)

t

f

T

= 125 °C

j

- 40 60

- 60 90

- 250 470

- 500 680

ns

Semiconductor Group

3 Jul-31-1996