Siemens BUP314S Datasheet

IGBT

• High switching speed

• Very low switching losses

• Low tail current

• Latch-up free

BUP 314S

Preliminary data

• Avalanche rated

Pin 1

Pin 2 Pin 3

G C E

Type

V

CE

I

C

Package Ordering Code

BUP 314S 1200V 25A TO-218 AB C67040-A4207-A2

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage

= 20 k

R

GE

Ω

Gate-emitter voltage DC collector current

= 25 °C

T

C

= 90 °C

T

C

Pulsed collector current,

= 25 °C

T

C

= 90 °C

T

C

= 1 ms

t

p

Avalanche energy, single pulse

= 25 A,

I

C

= 200 µH,

L

V

CC

T

= 50 V,

= 25 °C

j

R

GE

= 25

Power dissipation

= 25 °C

T

C

Chip or operating temperature Storage temperature

Ω

Symbol Values Unit

V V

CE CGR

1200 V

1200

V I

GE

C

± 20

A 25 17

I

Cpuls

50 34

E

AS

mJ

65

P

tot

W

300

T

j

T

stg

-55 ... + 150 °C

-55 ... + 150

Semiconductor Group

1 Feb-07-1997

Maximum Ratings

BUP 314S

Preliminary data

Parameter

Symbol Values Unit

DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case

Electrical Characteristics

, at T

Parameter

R

thJC

= 25 °C, unless otherwise specified

j

Symbol Values Unit

0.42

≤

min. typ. max.

Static Characteristics

Collector-emitter breakdown voltage

V

= 0 V,

GE

= 0.3 mA,

I

C

= 25 °C

T

j

Gate threshold voltage

V

GE

=

V

CE, IC

= 0.35 mA,

= 25 °C

T

j

Collector-emitter saturation voltage

V V V V

GE GE GE GE

= 15 V, = 15 V, = 15 V, = 15 V,

= 15 A,

I

C

= 15 A,

I

C

= 30 A,

I

C

= 30 A,

I

C

= 25 °C

T

j

= 125 °C

T

j

= 25 °C

T

j

= 125 °C

T

j

Zero gate voltage collector current

= 1200 V,

V

CE

V

= 0 V,

GE

= 25 °C

T

j

Gate-emitter leakage current

V

GE

= 25 V,

V

CE

= 0 V

V

(BR)CES

V

GE(th)

V

CE(sat)

I

CES

I

GES

1200 - -

4.5 5.5 6.5

-

-

-

-

5.5

4.6 8

6.6

7.6

-

-

-

- - 0.8

- - 100

K/W

V

mA

nA

Semiconductor Group

2 Feb-07-1997

AC Characteristics

BUP 314S

Preliminary data

Transconductance

V

CE

= 20 V,

= 15 A

I

C

Input capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Output capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Reverse transfer capacitance

= 25 V,

V

CE

Electrical Characteristics

= 0 V, f = 1 MHz

V

GE

, at T

Parameter

= 25 °C, unless otherwise specified

j

g

fs

C

iss

C

oss

C

rss

Symbol Values Unit

Switching Characteristics, Inductive Load at

Turn-on delay time

= 600 V,

V R

CC Gon

= 47

Ω

V

GE

Rise time

= 600 V,

V R

CC Gon

= 47

Ω

V

GE

Turn-off delay time

= 600 V,

V R

CC Goff

= 47

Ω

V

GE

Fall time

= 600 V,

V R

CC Goff

= 47

Ω

V

GE

= 15 V,

= 15 V,

= -15 V,

= -15 V,

= 15 A

I

C

= 15 A

I

C

= 15 A

I

C

= 15 A

I

C

t

d(on)

t

r

t

d(off)

t

f

8.5 12 -

- 1950 2600

- 180 270

- 120 180

min. typ. max.

T

= 125 °C

j

- 65 100

- 60 90

- 420 560

- 70 95

S

pF

ns

Semiconductor Group

3 Feb-07-1997

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