Siemens BUP314 Datasheet

IGBT

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Avalanche rated

BUP 314

Pin 1

Pin 2 Pin 3

G C E

Type

V

CE

I

C

Package Ordering Code

BUP 314 1200V 52A TO-218 AB Q67040-A4206-A2

Maximum Ratings Parameter

Collector-emitter voltage Collector-gate voltage

R

GE

= 20 k

Ω

Gate-emitter voltage DC collector current

T

= 25 °C

C

T

= 90 °C

C

Pulsed collector current,

T

= 25 °C

C

t

= 1 ms

p

Symbol Values Unit

V V

CE CGR

1200 V

1200

V I

GE

C

± 20

A 52 33

I

Cpuls

104

T

= 90 °C

C

Avalanche energy, single pulse

I

= 25 A,

C

L

= 200 µH,

V

CC

T

= 50 V,

= 25 °C

j

R

GE

= 25

Power dissipation

T

= 25 °C

C

Chip or operating temperature Storage temperature

Semiconductor Group

Ω

66

E

AS

mJ

65

P

tot

W

300

T

j

T

stg

-55 ... + 150 °C

-55 ... + 150

1 Jul-30-1996

Maximum Ratings

BUP 314

Parameter

Symbol Values Unit

DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance

≤

Thermal resistance, chip case

Electrical Characteristics

, at T

Parameter

R

thJC

= 25 °C, unless otherwise specified

j

Symbol Values Unit

0.42

min. typ. max.

Static Characteristics

Gate threshold voltage

V

GE

=

V

CE, IC

= 0.35 mA

Collector-emitter saturation voltage

V

GE

= 15 V,

= 25 A,

I

C

= 25 °C

T

j

V

GE(th)

V

CE(sat)

4.5 5.5 6.5

-

2.7

3.2

K/W

V

V V V

GE GE GE

= 15 V, = 15 V, = 15 V,

= 25 A,

I

C

= 42 A,

I

C

= 42 A,

I

C

= 125 °C

T

j

= 25 °C

T

j

= 125 °C

T

j

Zero gate voltage collector current

= 1200 V,

V

CE

V

= 0 V,

GE

= 25 °C

T

j

Gate-emitter leakage current

V

GE

= 25 V,

V

CE

= 0 V

AC Characteristics

Transconductance

V

CE

= 20 V,

= 25 A

I

C

Input capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Output capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Reverse transfer capacitance

I

CES

I

GES

g

fs

C

iss

C

oss

C

rss

-

-

-

3.3

3.4

4.3

3.9

-

-

- - 0.25

- - 100

8.5 20 -

- 1650 2200

- 250 380

mA

nA

S

pF

= 25 V,

V

CE

Semiconductor Group

V

GE

= 0 V, f = 1 MHz

- 110 160

2 Jul-30-1996

BUP 314

Electrical Characteristics Parameter

= 25 °C, unless otherwise specified

, at T

j

Symbol Values Unit

Switching Characteristics, Inductive Load at

Turn-on delay time

= 600 V,

V R

CC Gon

= 47

Ω

V

GE

Rise time

= 600 V,

V R

CC Gon

= 47

Ω

V

GE

Turn-off delay time

= 600 V,

V R

CC Goff

= 47

Ω

V

GE

Fall time

= 15 V,

= 15 V,

= -15 V,

= 25 A

I

C

= 25 A

I

C

= 25 A

I

C

t

d(on)

t

r

t

d(off)

t

f

min. typ. max.

T

= 125 °C

j

- 75 110

- 65 100

- 420 560

ns

V R

CC Goff

= 600 V,

= 47

Ω

V

GE

= -15 V,

= 25 A

I

C

- 45 60

Semiconductor Group

3 Jul-30-1996

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