Siemens BUP313D Datasheet
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
BUP 313D
• Including fast free-wheel diode
Pin 1 Pin 2 Pin 3
G C E
Type
V
CE
I
C
Package Ordering Code
BUP 313D 1200V 32A TO-218 AB Q67040-A4228-A2
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-gate voltage
R
= 20 kΩ
GE
Gate-emitter voltage
DC collector current
T
= 25 °C
C
T
= 90 °C
C
Pulsed collector current,
t
= 1 ms
p
V
CE
V
CGR
V
GE
I
C
I
Cpuls
1200 V
1200
± 20
A
32
20
T
= 25 °C
C
T
= 90 °C
C
Diode forward current
T
= 90 °C
C
Pulsed diode current,
T
= 25 °C
C
t
= 1 ms
p
Power dissipation
T
= 25 °C
C
Chip or operating temperature
Storage temperature
Semiconductor Group
64
40
I
F
18
I
Fpuls
108
P
tot
W
200
T
j
T
stg
-55 ... + 150 °C
-55 ... + 150
1 Dec-02-1996
BUP 313D
Maximum Ratings
Parameter Symbol Values Unit
DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Thermal Resistance
Thermal resistance, chip case
Diode thermal resistance, chip case
R
thJC
R
thJCD
≤
0.63 K/W
≤
1.25
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
=
GE
V
CE, IC
= 0.35 mA,
T
= 25 °C
j
Collector-emitter saturation voltage
V
V
V
V
GE
GE
GE
GE
= 15 V,
= 15 V,
= 15 V,
= 15 V,
I
= 15 A,
C
I
= 15 A,
C
I
= 30 A,
C
I
= 30 A,
C
T
= 25 °C
j
T
= 125 °C
j
T
= 25 °C
j
T
= 125 °C
j
Zero gate voltage collector current
V
GE(th)
V
CE(sat)
I
CES
4.5 5.5 6.5
-
-
-
-
2.7
3.3
3.4
4.3
3.2
3.9
-
-
V
mA
V
= 1200 V,
CE
V
GE
= 0 V,
T
Gate-emitter leakage current
V
= 25 V,
GE
V
CE
= 0 V
AC Characteristics
Transconductance
V
= 20 V,
CE
I
= 15 A
C
Input capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Output capacitance
V
= 25 V,
CE
V
= 0 V, f = 1 MHz
GE
Reverse transfer capacitance
V
= 25 V,
CE
Semiconductor Group
V
= 0 V, f = 1 MHz
GE
= 25 °C
j
- - 0.4
I
GES
nA
- - 100
g
fs
S
- 12 -
C
iss
pF
- 1000 1350
C
oss
- 150 225
C
rss
- 70 100
2 Dec-02-1996
BUP 313D
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
Turn-on delay time
V
R
CC
Gon
= 600 V,
= 82 Ω
V
GE
Rise time
V
R
CC
Gon
= 600 V,
= 82
Ω
V
GE
Turn-off delay time
V
R
CC
Goff
= 600 V,
= 82
Ω
V
GE
Fall time
V
R
CC
Goff
= 600 V,
= 82
Ω
V
GE
= 15 V,
= 15 V,
= -15 V,
= -15 V,
I
= 15 A
C
I
= 15 A
C
I
= 15 A
C
I
= 15 A
C
t
d(on)
t
r
t
d(off)
t
f
Free-Wheel Diode
T
= 125 °C
j
- 70 100
- 45 70
- 400 530
- 70 95
ns
Diode forward voltage
I
= 15 A,
F
I
= 15 A,
F
V
V
GE
GE
= 0 V,
= 0 V,
T
= 25 °C
j
T
= 125 °C
j
Reverse recovery time
I
= 15 A,
F
d
iF/dt = -800 A/µs
T
= 25 °C
j
T
= 125 °C
j
V
= -600 V,
R
V
Reverse recovery charge
I
= 15 A,
F
d
iF/dt = -800 A/µs
T
= 25 °C
j
T
= 125 °C
j
V
= -600 V,
R
V
GE
GE
= 0 V
= 0 V
V
t
Q
F
-
-
rr
-
-
rr
-
-
2.2
1.7
100
1
3
2.8
-
150
1.8
5.4
V
ns
µC
Semiconductor Group
3 Dec-02-1996
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