siemens bup212 Datasheet

IGBT

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

BUP 212

• Avalanche rated

Pin 1

Pin 2 Pin 3

G C E

Type

V

CE

I

C

Package Ordering Code

BUP 212 1200V 22A TO-220 AB Q67040-A . . . . .

Maximum Ratings Parameter

Collector-emitter voltage Emitter-collector voltage Collector-gate voltage

= 20 k

R

GE

Ω

Gate-emitter voltage DC collector current

= 25 °C

T

C

= 110 °C

T

C

Pulsed collector current,

= 25 °C

T

C

= 110 °C

T

C

= 1 ms

t

p

Avalanche energy, single pulse

= 8 A,

I

C

= 300 µH,

L

V

CC

= 50 V,

= 25 °C

T

j

R

GE

= 25

Power dissipation

= 25 °C

T

C

Chip or operating temperature Storage temperature

Ω

Symbol Values Unit

V V V

CE EC CGR

1200 V

1200

V I

GE

C

± 20

22

8

I

Cpuls

44 16

E

AS

10

P

tot

125

T

j

T

stg

-55 ... + 150 °C

-55 ... + 150

A

mJ

W

Semiconductor Group

1 May-05-1997

Maximum Ratings

BUP 212

Parameter

Symbol Values Unit

DIN humidity category, DIN 40 040 - E IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case

Electrical Characteristics

, at T

Parameter

R

thJC

= 25 °C, unless otherwise specified

j

Symbol Values Unit

1

≤

min. typ. max.

Static Characteristics

Gate threshold voltage

V

GE

=

V

CE, IC

= 0.3 mA,

= 25 °C

T

j

Collector-emitter saturation voltage

V V V V

GE GE GE GE

= 15 V, = 15 V, = 15 V, = 15 V,

= 8 A,

I

C

= 8 A,

I

C

= 16 A,

I

C

= 16 A,

I

C

= 25 °C

T

j

= 125 °C

T

j

= 25 °C

T

j

= 125 °C

T

j

Zero gate voltage collector current

= 1200 V,

V

CE

V

= 0 V,

GE

= 25 °C

T

j

Gate-emitter leakage current

V

GE

= 25 V,

V

CE

= 0 V

V

GE(th)

V

CE(sat)

I

CES

I

GES

4.5 5.5 6.5

-

2.5

3.1

3.4

4.3

3

3.7

-

- - 0.4

- - 120

K/W

V

mA

nA

AC Characteristics

Transconductance

V

CE

= 20 V,

= 8 A

I

C

Input capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Output capacitance

V

CE

= 25 V,

= 0 V, f = 1 MHz

V

GE

Reverse transfer capacitance

= 25 V,

V

CE

Semiconductor Group

= 0 V, f = 1 MHz

V

GE

g

fs

S

4 5 -

C

iss

pF

- 600 800

C

oss

- 60 90

C

rss

- 38 55

2 May-05-1997

Electrical Characteristics Parameter

, at T

= 25 °C, unless otherwise specified

j

Symbol Values Unit

min. typ. max.

BUP 212

Switching Characteristics, Inductive Load at

Turn-on delay time

= 600 V,

V R

CC Gon

= 150

Ω

V

GE

Rise time

= 600 V,

V R

CC Gon

= 150

Ω

V

GE

Turn-off delay time

= 600 V,

V R

CC Goff

= 150

Ω

V

GE

Fall time

= 600 V,

V R

CC Goff

= 150

Ω

V

GE

= 15 V,

= -15 V,

= 8 A

I

C

= 8 A

I

C

I

C

I

C

= 8 A

t

d(on)

t

r

t

d(off)

t

f

T

= 125 °C

j

- 55 110

- 50 100

- 380 570

- 80 120

ns

Semiconductor Group

3 May-05-1997

BUP 212

Power dissipation

P

tot

parameter:

P

tot

T

= ƒ(

)

C

≤

T

150 °C

j

130

W 110 100

90 80 70 60 50 40 30 20 10

0

0 20 40 60 80 100 120 °C 160

Collector current

I

parameter:

T

C

= ƒ(

C

I

C

T

)

C

≥

V

26

A 22 20 18 16 14 12 10

8 6 4 2

0

0 20 40 60 80 100 120 °C 160

GE

15 V ,

T

j

≤

150 °C

T

C

Safe operating area

I

parameter:

C

I

C

= ƒ(

10

V

A

-1

CE

2

1

0

10

)

D

, T

= 0

0

10

C

1

= 25°C ,

2

10

T

j

≤

150 °C

t

= 13.0µs

p

DC

10

100 µs

1 ms

10 ms

3

V

CE

Transient thermal impedance IGBT

Z

th JC

parameter:

Z

thJC

V

= ƒ(

10

K/W

10

-1

-2

-3

1

0

10

t

)

p

D = t

single pulse

-5

10

T

/

p

D = 0.50

0.20

0.10

0.05

0.02

0.01

-4

10

-3

10

-2

10

-1

t

p

0

10

s

Semiconductor Group

4 May-05-1997

BUP 212

Typ. output characteristics

=

I

f (V

C

parameter:

I

C

)

CE

= 80 µs,

t

p

20

A

17V

16

14

12

10

15V 13V 11V 9V 7V

8

6

4

2 0

0 1 2 3 V 5

= 25 °C

T

j

Typ. output characteristics

IC = f (V

parameter:

I

C

V

CE

)

CE

= 80 µs,

t

p

20

A

17V

16

14

12

10

15V 13V 11V 9V 7V

8

6

4

2 0

0 1 2 3 V 5

= 125 °C

T

j

V

CE

Typ. transfer characteristics

= f (

I

C

parameter:

I

C

)

V

GE

= 80 µs,

t

p

25

A

22 20 18 16 14 12 10

8 6 4 2

0

0 2 4 6 8 10 V 14

V

CE

= 20 V

V

GE

Semiconductor Group

5 May-05-1997

BUP 212

Typ. switching time

)

t = f (I

par.:

t

inductive load ,

,

C

=600V,

V

CE

3

10

ns

2

10

1

10

0 4 8 12 16 20 24 A 30

V

GE

= 125°C

T

j

= ±15V,

R

tdoff

tr tf

tdon

=153

G

Ω

Typ. switching time

t = f (R

par.:

t

I

C

) , inductive load ,

G

=600V,

V

CE

3

10

ns

2

10

1

10

0 50 100 150 200 250 300 350 400

V

GE

= ±15V,

= 125°C

T

j

I

C

=8 A

tdoff

tf tdon tr

500

Ω

R

G

Typ. switching losses

)

E = f (I

par.:

V

mWs

E

inductive load ,

,

C

=600V,

CE

10

8

7

6

5

4

3

2

1 0

0 4 8 12 16 20 24 A 30

V

GE

= ±15V,

= 125°C

T

j

R

Eon

Eoff

=153

G

Ω

= ±15V,

GE

, T

j

= 125°C

=8 A

I

C

Eon

500

Ω

R

G

Typ. switching losses

)

E = f (R

par.:

V

mWs

E

I

C

inductive load

,

G

=600V,

CE

10

8

7

6

5

4

3

2

1 0

0 50 100 150 200 250 300 350 400

V

Semiconductor Group

6 May-05-1997

BUP 212

Typ. gate charge

V

GE

parameter:

V

GE

Q

= ƒ(

20

V

16

14

12

10

8

6

4

2 0

)

Gate

I

= 15 A

C puls

0 10 20 30 40 50 60 70 80 nC 100

Q

800 V600 V

Gate

Typ. capacitances

C = f (V

CE

)

4

10

pF

C

3

10

2

10

1

10

0 5 10 15 20 25 30 V 40

C

iss

C

oss

C

rss

V

CE

Short circuit safe operating area

I

f (V

=

Csc

parameter:

10

I

Csc

I

/

C(90°C)

6

4

2

0

0 200 400 600 800 1000 1200 V 1600

CE

) ,

V

T

= 150°C

j

= ± 15 V,

GE

t

≤ 10 µs, L < 25 nH

sc

Reverse biased safe operating area

I

= f (VCE) ,

Cpuls

parameter:

2.5

I

Cpuls

V

CE

I

/

C

1.5

1.0

0.5

0.0 0 200 400 600 800 1000 1200 V 1600

V

GE

T

= 150°C

j

= 15 V

V

CE

Semiconductor Group

7 May-05-1997