siemens bsp752t Datasheet

Target data sheet

)

Smart Power High-Side-Switch

BSP 752 T

Features

• Overload protection

• Current limitation

• Short circuit protection

Product Summary

Overvoltage protection Operating voltage V On-state resistance

• Thermal shutdown with restart

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection with external resistor

• CMOS compatible input

• Loss of GND and loss of

V

protection

bb

• ESD - Protection

• Very low standby current

V

bb(AZ

V

bb(on

R

ON

I

L(nom

60 V

5...34 200

1.3

mΩ ANominal load current

Application

• All types of resistive, inductive and capacitive loads

• µC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded

protection functions.

Semiconductor Group 24.03.1999

Page 1

Block Diagram

Voltage source

IN

ESD

V

Logic

Target data sheet

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Temperature

sensor

+ V

BSP 752 T

bb

OUT

Load

GND

Signal GND

miniPROFET

FunctionPin Symbol

1 GND Logic ground

Input, activates the power switch in case of logic high signal2 IN

3 OUT Output to the load

not connectedNC4

5 Vbb Positive power supply voltage

Positive power supply voltage6 Vbb Positive power supply voltage7 Vbb



Load GND

8 Vbb Positive power supply voltage

Semiconductor Group 24.03.1999

Page 2

Target data sheet

BSP 752 T

Maximum Ratings at

T

=25°C, unless otherwise specified

j

Parameter Value UnitSymbol

V

bb

V

bb(SC)

Continuous input voltage

Current through input pin (DC)

Operating temperature -40 ...+150 °C

1)

Inductive load switch-off energy dissipation

1)2)

V I I T T P E

IN L IN

j

stg

tot

AS

40 VSupply voltage

tbdSupply voltage for full short circuit protection

-10 ... +16

self limitedLoad current (Short - circuit current, see page 5) A

± 5

-55 ... +150Storage temperature

tbd mJ

µA

W1.5Power dissipation

single pulse, (see page 8) Tj =150 °C

Load dump protection2)

R

=2Ω,

t

I

=400ms,

d

V

= low or high,

IN

V

LoadDump

3)

=

V

+

A

=13,5V

A

V

S

Electrostatic discharge voltage (Human Body Model)

V

/RDGGXPS

V

ESD

tbd

V

kV according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Input pin all other pins

Thermal Characteristics

R

th(JA)

1)

1

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 11) 2

not tested, specified by design 3

V

Loaddump

Supply voltages higher than

50Ω resistor in GND connection. A resistor for the protection of the input is integrated.

1

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .

V

require an external current limit for the GND pin, e.g. with a

bb(AZ)

R

th(JA)

± 1

± 5

95 -Thermal resistance @ min. footprint 70Thermal resistance @ 6 cm2 cooling area

K/W-

83-

Semiconductor Group 24.03.1999

Page 3

Target data sheet

BSP 752 T

Electrical Characteristics Parameter Symbol Values Unit

DW7M &9EE 9XQOHVVRWKHUZLVHVSHFLILHG

Load Switching Capabilities and Characteristics

On-state resistance

T

= 25 °C

j

T

= 150 °C

j

T

= 85 °C,

C

Turn-on time to 90%

T

≤ 150 °C

j

V

OUT

V

OUT

, dV/dt

OUT

, 1 tbd

OUT

Operating Parameters

T

= -40 ... +150 °C

j

R

ON

I

L(nom)

t

on

t

off

-dV/dt

V

bb(on)

on

off

min. max.typ.

-

tbd

1.3 1.7Nominal load current; Device on PCB 1)

- 80

- 80Turn-off time to 10%

- 1 tbd V/µsSlew rate on 10 to 30% V

-Slew rate off 70 to 40% V

5 - 34 VOperating voltage

200

400

tbd tbd

mΩ

A-

µs

V

bb(under)

V

bb(u cp)

I

bb(off)

V

= 0 V,

IN

V

= 0 V,

IN

Leakage output current (included in

V

= 0 V

IN

V

= 5 V

IN

1

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 11) 2

higher current due temperature sensor

T

= -40 ... +85 °C

j

T

= 150°C 2)

j

I

bb(off)

)

I

L(off)

I

GND

-Undervoltage shutdown of charge pump - tbd

- -Undervoltage restart of charge pump tbd

-

- 1

-

10

15

µAStandby current

tbd- -

tbd

mAOperating current

Semiconductor Group 24.03.1999

Page 4

Target data sheet

j

Electrical Characteristics Parameter and Conditions Symbol UnitValues

BSP 752 T

DW7M &9EE 9XQOHVVRWKHUZLVHVSHFLILHG

min. max.typ.

Protection Functions

T

= -40 °C,

j

T

= 25 °C

j

T

= 150 °C

j

V

= tbd V,

bb

t

= tbd µs

m

I

L(SCp)

I

L(SCr)

-

tbd

- tbdRepetitive short circuit current limit

-

7.5

-

tbd

-

AInitial peak short circuit current limit (pin 5 to 3)

Tj = Tjt (see timing diagrams)

V

ON(CL)

at

V

=

V

-

OUT

bb

V

ON(CL)

Overvoltage protection 1)

T

= -40...+150 °C

j

Thermal overload trip temperature °C

,

V

bb(AZ)

T

t

∆

T

t

60 tbd VOutput clamp (inductive load switch off)

60 -

150 - -

-Thermal hysteresis 10 - K

-

Reverse Battery

2)

Drain-source diode voltage (

T

= 150 °C

j

1

see also V

2

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see max. ratings page 3).

in circuit diagram on page 7

ON(CL)

V

OUT

>

V

bb

)

-

V

bb

-

V

ON

- - tbdReverse battery

-

V

tbd - mV

Semiconductor Group 24.03.1999

Page 5

Target data sheet

)

BSP 752 T

Parameter and Conditions ValuesSymbol Unit

DW7M &9EE 9XQOHVVRWKHUZLVHVSHFLILHG

min. typ. max.

Input

Input turn-on threshold voltage

T

= -40 ... +150°C

j

T

= -40 ... +150°C

j

Input threshold hysteresis V-0.3-

V

= 0.7 V,

IN

V

= 5 V,

IN

T

= -40 ... +150 °C

j

T

= -40 ... +150 °C

j

Input resistance (see page 7)

V

IN(T+)

V

IN(T-)

∆

V

IN(T

I

IN(off)

I

IN(on)

R

I

0.8Input turn-off threshold voltage

- - 2.2 V

--

1Off state input current

3

- 25

-

25On state input current

- 3.5 -

µA

kΩ

Semiconductor Group 24.03.1999

Page 6

Target data sheet

V

BSP 752 T

Terms

I

bb

V

R

GND

bb

PROFET

GND

I

GND

OUT

I

IN

V

IN

V

bb

Input circuit (ESD protection)

R

ESD-

I

ZD

I

GND

IN

7KHXVHRI(6']HQHUGLRGHVDVYROWDJHFODPS DW'&FRQGLWLRQVLVQRWUHFRPPHQGHG

Inductive and overvoltage output clamp

+ V

bb

V

Z

V

I

V

L

V

ON

GND

OUT

ON

OUT

VON clamped to 47 V typ.

Overvoltage protection of logic part

+ V

bb

V

Z2

R

I

IN

V

Z1

VZ1=6.1V typ., VZ2=V RI=3.5 kΩ typ., R

GND

Logic

bb(AZ)

=150Ω

R

GND

=47V typ.,

GND

Signal GND

Reverse battery protection

-

bb

Logic

R

I

IN

Power Inverse

Diode

GND

R

GND

Signal GND

R

=150Ω, RI=3.5kΩ typ.,

GND

Temperature protection is not active during inverse current

Semiconductor Group 24.03.1999

R

Power GND

OUT

L

Page 7

Target data sheet

BSP 752 T

GND disconnect

V

bb

VbbV

IN

PROFET

GND

IN

V

GND

OUT

GND disconnect with GND pull up

V

bb

IN

PROFET

GND

OUT

Vbb disconnect with charged inductive load

V

bb

high

V

bb

IN

PROFET

GND

OUT

Inductive Load switch-off energy dissipation

E

bb

E

AS

E

V

bb

Load

V

bb

V

IN

V

GND

=

IN

PROFET

GND

Energy stored in load inductance: EL = ½ * L * I

OUT

L

E

L

Z

L

^

E

R

L

R

2

L

While demagnetizing load inductance, the enérgy dissipated in PROFET is EAS = Ebb + EL - ER = ∫ V

ON(CL)

* iL(t) dt,

with an approximate solution for RL > 0Ω:

IR

*

IL

*

E

L

AS

=+ +

*

2

VV

*( | )*ln(

L

bb OUT CL

R

()|

LL

1

V

||

OUT CL

()

)

Semiconductor Group 24.03.1999

Page 8

Timing diagrams

Target data sheet

BSP 752 T

Figure 1a: Vbb turn on:

IN

V

bb

V

OUT

Figure 2b: Switching a lamp,

IN

OUT

I

L

t

Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition

IN

V

OUT

90%

10%

I

L

t

on

dV/dton

t

off

d V /dtoff

Figure 2c: Switching an inductive load

IN

V

OUT

I

L

t

Semiconductor Group 24.03.1999

Page 9

Target data sheet

j

BSP 752 T

Figure 3a: Turn on into short circuit,

shut down by overtemperature, restart by cooling

IN

t

I

L

I

L(SCp)

t

m

t

off(SC)

+HDWLQJXSRIWKHFKLSPD\UHTXLUHVHYHUDOPLOOLVHFRQGVGHSHQGLQJ RQH[WHUQDOFRQGLWLRQV

I

L(SCr)

t

Figure 4: Overtemperature: Reset if Tj < T

t

IN

Figure 5: Undervoltage restart of charge pump

V

o n

V

b b ( u c p )

V

b b ( u n d e r )

V

b b

V

OUT

T

J

t

Semiconductor Group 24.03.1999

Page 10

Target data sheet

BSP 752 T

Package and ordering code

all dimensions in mm

Ordering code:

XXX

Printed circuit board (FR4, 1.5mm thick, one

layer 70µm, 6cm2 active heatsink area ) as a reference for max. power dissipation P

Edition 03 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb,

Werbung, Balanstraße 73, 81541 München

Attention please!

As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer.

Packing

Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose!

Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG.

1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

nominal load current I resistance R

thja

L(nom)

and thermal

tot

Semiconductor Group 24.03.1999

Page 11