Siemens BSP300 Datasheet

BSP 300

SIPMOS

®

Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

•

V

= 2.0... 4.0 V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

G D S D

Type

V

DS

I

D

R

DS(on)

Package Marking

BSP 300 800 V 0.19 A 20 Ω SOT-223 BSP 300

Type Ordering Code Tape and Reel Information

BSP 300 Q67050 -T0009 E6433
BSP 300 Q67050-T0017 E6327

Maximum Ratings
Parameter Symbol Values Unit

Continuous drain current

T

= 25 °C

A

DC drain current, pulsed

T

= 25 °C

A

Avalanche energy, single pulse

I

= 0.8 A,

D

L

= 105 mH,

V

DD

T

= 50 V,

= 25 °C

j

R

GS

= 25

Gate source voltage
Power dissipation

T

= 25 °C

A

Ω

I

D

I

Dpuls

E

AS

V

GS

P

tot

A

0.19

0.76
mJ

36

± 20 V

W

1.8

Semiconductor Group 1 02/12/1996

BSP 300

Maximum Ratings
Parameter Symbol Values Unit

Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air

1)

Thermal resistance, junction-soldering point

1)

T
T
R
R

j
stg

thJA
thJS

-55 ... + 150 °C

-55 ... + 150

≤ 70 K/W
≤

14
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

(BR)DSS

V

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 25 °C

j

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V
V

DS
DS

= 800 V,
= 800 V,

V
V

GS
GS

= 0 V,
= 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= 10 V,

GS

I

= 0.19 A

D

V

GS(th)

I

DSS

I

GSS

R

DS(on)

800 - -

2 3 4

-

-

0.1
10

1
100

- 10 100

- 15 20

µA

nA

Ω

Semiconductor Group 2 02/12/1996

BSP 300

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 0.19 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 0.25 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

0.06 0.27 ­pF

- 170 230

- 20 30

- 10 15
ns

- 7 11

Rise time

V
R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V
R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

Fall time

V
R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 0.25 A

D

I

= 0.25 A

D

I

= 0.25 A

D

t

r

t

d(off)

t

f

- 16 24

- 27 36

- 21 28

Semiconductor Group 3 02/12/1996