Siemens BSP299 Datasheet

SIPMOS ® Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

•

V

= 2.1 ... 4.0 V

GS(th)

BSP 299

Pin 1 Pin 2 Pin 3 Pin 4

G D S D

Type

V

DS

I

D

R

DS(on)

Package Marking

BSP 299 500 V 0.4 A 4 Ω SOT-223 BSP 299

Type Ordering Code Tape and Reel Information

BSP 299 Q67000-S225 E6327

Maximum Ratings Parameter Symbol Values Unit

Continuous drain current

T

= 44 °C

A

DC drain current, pulsed

T

= 25 °C

A

Avalanche energy, single pulse

I

= 1.2 A,

D

V

DD

= 50 V,

R

GS

= 25

Ω

I

D

I

Dpuls

E

AS

A

0.4

1.6 mJ

L

= 163 mH, Gate source voltage Power dissipation

T

= 25 °C

A

Semiconductor Group 1 Sep-12-1996

T

= 25 °C

j

V P

GS tot

130 ± 20 V

W

1.8

BSP 299

Maximum Ratings Parameter Symbol Values Unit

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point

T

j

T

stg

R

thJA

1)

R

thJS

-55 ... + 150 °C

-55 ... + 150

≤ 70 K/W ≤

10 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

(BR)DSS

V

= 0 V,

GS

I

= 0.25 mA,

D

T

= 0 °C

j

Gate threshold voltage

=

V

GS

V

DS, ID

= 1 mA

Zero gate voltage drain current

V V

DS DS

= 500 V, = 500 V,

V V

GS GS

= 0 V, = 0 V,

T

= 25 °C

j

T

= 125 °C

j

Gate-source leakage current

V

= 20 V,

GS

V

DS

= 0 V

Drain-Source on-state resistance

V

= 10 V,

GS

I

= 0.4 A

D

V

GS(th)

I

DSS

I

GSS

R

DS(on)

500 - -

2.1 3 4

-

0.1 10

1 100

- 10 100

- 3.5 4

µA

nA

Ω

Semiconductor Group 2 Sep-12-1996

BSP 299

Electrical Characteristics, at

T

= 25°C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

I

*

D * RDS(on)max, ID

= 0.4 A

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

= 0.3 A

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

S

0.3 1.2 pF

- 300 400

- 40 60

- 15 25 ns

- 8 12

Rise time

V R

DD

GS

= 30 V,

= 50

Ω

V

GS

= 10 V,

Turn-off delay time

V R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

Fall time

V R

DD

GS

= 30 V,

= 50 Ω

V

GS

= 10 V,

I

= 0.3 A

D

I

= 0.3 A

D

I

= 0.3 A

D

t

r

t

d(off)

t

f

- 15 22

- 55 70

- 30 40

Semiconductor Group 3 Sep-12-1996