Siemens BSP280 Datasheet

IGBT Transistor BSP 280

Preliminary Data

● V

● I

● N channel

● MOS input (voltage-controlled)

● High switch speed

● Very low tail current

● Latch-up free

● Suitable freewheeling diode BAX 280

Type Ordering Code Tape and Reel

1000 V

CE

2.5 A

C

Information

Pin Configuration Marking Package

1234

BSP 280 Q67000-S279 E6327: 1000 pcs/reel G C E C BSP 280 SOT-223

Maximum Ratings
Parameter Symbol Values Unit

Continuous collector current

T

Soldering point,

Continuous collector current ambient,

= 25 ˚C

S

T

= 80 ˚C

S

T

Pulsed collector current

T

Soldering point,

= 80 ˚C

S

Collector-emitter voltage
Gate-emitter voltage
Power dissipation

Soldering point,
Ambient

T

= 80 ˚C

S

T

= 25 ˚C

A

Operating and storage temperature range
Thermal resistance

1)

chip-ambient
chip-soldering point

= 80 ˚C I

A

I

C

C

I

C puls

V
V
P

T
R

R

CE

GE

tot

, T

j

thJA
thJS

stg

2.5

1.5

0.5

3.0
1000 V
± 20

10

1.8
– 40 … + 150 ˚C
70

6

A

W

K/W

DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 40/150/56

IGBT = Insulated Gate Bipolar Transistor

1)

Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection.

BSP 280

Electrical Characteristics

T

= 25 ˚C, unless otherwise specified.

at

j

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Collector-emitter breakdown voltage

V

= 0, IC = 0.1 mA

GE

Gate threshold voltage

V

= VCE, IC = 0.1 mA

GE

Collector-emitter saturation voltage

V

= 15 V, IC = 0.5 A

GE

T

= 25 ˚C

j

T

= 125 ˚C

j

T

= 150 ˚C

j

V

= 15 V, IC = 1.5 A

GE

T

= 25 ˚C

j

T

= 125 ˚C

j

T

= 150 ˚C

j

Zero gate voltage collector current

V

= 1000 V, VGE = 0

CE

T

= 25 ˚C

j

T

= 125 ˚C

j

Gate-emitter leakage current

V

= 20 V, VCE = 0

GE

V

(BR)CES

V

GE(th)

V

CE(sat)

I

CES

I

GES

1000 – –

4.5 5.5 6.5

–
–
–

–
–
–

–
–

1.8

2.1

2.2

2.8

3.8

4.0

1
–

–
–

3.0

3.3

4.3

4.5

25
100

– 0.1 100

V

µA

nA

Dynamic Characteristics

Forward transconductance

V

= 20 V, IC = 1.5 A

CE

Input capacitance

V

= 0, VGE = 25 V, f = 1 MHz

CE

Output capacitance

V

= 0, VGE = 25 V, f = 1 MHz

CE

Reverse transfer capacitance

V

= 0, VGE = 25 V, f = 1 MHz

CE

Turn-on delay time

V

=600V,VGE =15V,R

CC

G(on)

Rise time

V

=600V,VGE =15V,R

CC

G(on)

=25Ω, IC =1.5A

=25Ω, IC =1.5A

g

C

C

C

t

d(on)

t

r

fs

iiss

oss

rss

S

– 0.6 –

pF

– 225 –

–25–

–13–

ns

–20–

–15–