Siemens BS170 Datasheet

BS 170

SIPMOS

®

Small-Signal Transistor

• N channel

• Enhancement mode

• Logic Level

• V

GS(th)

Type

BS 170 60 V 0.3 A 5

= 0.8...2.0V

V

DS

I

D

R

DS(on)

Ω

Package Marking

TO-92 BS 170

Type Ordering Code Tape and Reel Information

BS 170 Q67000-S076 E6288

Pin 1 Pin 2 Pin 3

S G D

Maximum Ratings Parameter

Drain source voltage Drain-gate voltage

R

GS

= 20 k

Ω

Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current

T

= 25 °C

A

DC drain current, pulsed

T

= 25 °C

A

Power dissipation

T

= 25 °C

A

Symbol Values Unit

V V

DS DGR

60 V

60

V V I

GS gs

D

± ±

14 20

A

0.3

I

Dpuls

1.2

P

tot

W

0.63

Semiconductor Group

1 12/05/1997

Maximum Ratings

BS 170

Parameter

Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air

1)

Symbol Values Unit

T T R

j stg

thJA

-55 ... + 150 °C

-55 ... + 150

≤

200 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics,

Parameter

at

= 25°C, unless otherwise specified

T

j

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS

= 0 V,

= 0.25 mA,

I

D

= 25 °C

T

j

Gate threshold voltage

V

GS

=

V

DS, ID

= 1 mA

Zero gate voltage drain current

V V

DS DS

= 60 V, = 60 V,

V V

= 0 V,

GS

= 0 V,

GS

= 25 °C

T

j

= 125 °C

T

j

Gate-source leakage current

V

GS

= 20 V,

V

DS

= 0 V

Drain-Source on-state resistance

V

GS

= 10 V,

= 0.2 A

I

D

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

60 - -

0.8 1.4 2

-

0.05

-

0.5 5

- 1 10

- 2.5 5

K/W

V

µA

nA

Ω

Semiconductor Group

2 12/05/1997

BS 170

Electrical Characteristics,

Parameter

Dynamic Characteristics

Transconductance

≥

2

V

DS

I

*

D * RDS(on)max, ID

Input capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Output capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Reverse transfer capacitance

V

GS

= 0 V,

= 25 V, f = 1 MHz

V

DS

Turn-on delay time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Rise time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Turn-off delay time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

Fall time

V R

DD G

= 30 V,

= 50

Ω

V

GS

= 10 V,

I

D

= 25°C, unless otherwise specified

at

T

j

Symbol Values Unit

min. typ. max.

g

fs

= 0.2 A

C

iss

0.12 0.18 -

- 40 60

C

oss

- 15 25

C

rss

- 5 10

t

d(on)

= 0.29 A

- 5 8

t

r

= 0.29 A

- 8 12

t

d(off)

= 0.29 A

- 12 16

t

f

= 0.29 A

- 17 22

S

pF

ns

Semiconductor Group

3 12/05/1997