Siemens BRT23M, BRT23H, BRT22M, BRT22H, BRT21H Datasheet
BRT 21, BRT 22, BRT 23
SITAC
With Zero Voltage Switch
Without Zero Voltage Switch
AC switch with zero-voltage detector
•
Electrically insulated between input and output circuit
•
Microcomputer-compatible by very low trigger current
•
UL-tested (file no. E 52744), code letter "J"
•
Available with the following options:
•
Option 1: VDE 0884-approved
Option 6: Pins in 10.16 mm spacing
Option 7: Pins for sourface mounting
BRT 21 H
BRT 21 H
BRT 22 H
AC Switches
Opt.Type Ordering CodeMarking
- 300 mA400 V
V
DRM
600 V- 10 kV/µs
I
TRMS
300 mA 2 mA400 V1 + 6 10 kV/µs
300 mA 2 mA BRT 22 H
I
FT
dv/d
t
cr
BRT 21 H10 kV/µs2 mA
BRT 21 H
C67079-A1020-A6
C67079-A1050-A16
C67079-A1021-A6
BRT 22 H
BRT 22 H
BRT 22 H
BRT 22 H
BRT 22 M
BRT 22 M
BRT 23 H
BRT 23 H C67079-A1052-A8
BRT 23 H
BRT 23 H C67079-A1052-A14
BRT 23 M
7 600 V
1 + 6 600 V 300 mA
1 + 7 600 V 2 mA BRT 22 H
300 mA 3 mA600 V1 10 kV/µs
- 10 kV/µs
7 300 mA800 V 10 kV/µs
- 800 V 300 mA 3 mA 10 kV/µs BRT 23 M
800 V 300 mA 2 mA
2 mA300 mA 10 kV/µs
10 kV/µs
10 kV/µs2 mA BRT 22 H
10 kV/µs300 mA
10 kV/µs3 mA300 mA600 V-
BRT 22 H2 mA1 600 V 300 mA
BRT 22 H
BRT 22 M
BRT 22 M
BRT 23 H
BRT 23 H800 V 300 mA 10 kV/µs2 mA6
BRT 23 H2 mA
BRT 23 H1 + 6 800 V 300 mA 10 kV/µs2 mA
C67079-A1051-A5
C67079-A1051-A11
C67079-A1051-A16
C67079-A1051-A17
C67079-A1021-A10
C67079-A1051-A6
C67079-A1022-A6
C67079-A1052-A11
C67079-A1022-A10
Information Package Pin Configuration
1 2 3 4 5 6
50 pcs per tube P-DIP-6 Anode Kathode not
Cathode
A1 do not
A2
connected
Semiconductor Group 1 12.96
connect
BRT 21, BRT 22, BRT 23
Maximum Ratings
T
, at Tj = 25 °C, unless otherwise specified.
j
AC Switch
Parameter Symbol Value Unit
Max. Power dissipation
Chip or operating temperature
Storage temperature -40 ...+ 150
Insulation test voltage
1)
P
T
T
V
tot
j
stg
IS
630 mW
-40 ...+ 100
5300
°C
V
RMS
between input/output circuit
(climate in acc. with DIN 40046, part2, Nov.74)
Reference voltage in acc. with VDE 0110 b
(insulation group C)
Creepage tracking resistance
(in acc. with DIN IEC 112/VDE 0303, part 1)
Insulation resistance
V
= 500 V,
IO
V
= 500 V,
IO
T
= 25 °C
A
T
= 100 °C
A
V
C
R
ref
TI
is
≥
≥
500
600
175
10
10
12
11
V
RMS
V
DC
(group IIIa
acc. to DIN
VDE 0109)
Ω
DIN humidity category, DIN 40 040
Creepage distance (input/output circuit) Clearance (input/output circuit) -
-
≥
≥
F
7.2
7.2
Input Circuit
Parameter Symbol UnitValue
Param VR
Continuous forward current
Surge forward current,
t
≤
,
Max. power dissipation, t ≤ 10 µs
10 µs
V
R
I
F
I
FSM(I)
P
tot
6 V
1.5
30 mW
Output Circuit
Parameter
Repetitive peak off-state voltage
RMS on-state current
Single cycle surge current (50 Hz)
Max. power dissipation
Symbol BRT
V
DRM
I
TRMS
I
TSM(I)
P
tot
BRT
21
22
400 600 800
300 mA
3 A
600
mm
mA20
A
UnitBRT
23
V
mW
Semiconductor Group 2 12.96
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