Siemens BFS17S Datasheet

BFS 17S

NPN Silicon RF Transistor

• For broadband amplifiers up to 1GHz
at collector currents from 1mA to 20mA

Tape loading orientation

Type Marking Ordering Code Pin Configuration Package

BFS 17S MCs Q62702-F1645 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363

Maximum Ratings of any single Transistor
Parameter Symbol Values Unit

Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current

f

≥ 10 MHz

Total power dissipation

T

≤ 83 °C

S

Junction temperature
Ambient temperature
Storage temperature

V
V
V
I

C

I

CM

P

T
T
T

CEO
CBO
EBO

tot

j
A
stg

15 V
25

2.5
25 mA

50

mW
280
150 °C

- 65 + 150

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm

1)

R

thJS

≤

240 K/W

Semiconductor Group 1 Dec-18-1996

BFS 17S

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics of any single Transistor

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-base cutoff current

V
V

CB
CB

= 10 V,
= 25 V,

I

E

I

E

= 0
= 0

Emitter-base cutoff current

V

= 2.5 V,

EB

I

C

= 0

DC current gain

I

= 2 mA,

C

I

= 25 mA,

C

V

CE

V

CE

= 1 V

= 1 V

Collector-emitter saturation voltage

V

(BR)CEO

I

CBO

I

EBO

h

FE

V

CEsat

15 - -

-

-

-

-

0.05
10

- - 100

20
20

­ 70

150

-

V

µA

-

V

I

= 10 mA,

C

I

= 1 mA

B

- 0.1 0.4

Semiconductor Group 2 Dec-18-1996