Siemens BFR181 Datasheet
BFR 181
NPN Silicon RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12mA
•
f
= 8GHz
T
F = 1.45dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFR 181 RFs Q62702-F1314 1 = B 2 = E 3 = C SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
≤ 91 °C
S
Junction temperature
Ambient temperature
Storage temperature
V
V
V
V
I
I
P
T
T
T
C
B
CEO
CES
CBO
EBO
tot
j
A
stg
12 V
20
20
2
20 mA
2
mW
175
150 °C
- 65 ... + 150
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
≤ 335 K/W
1)
T
is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group 1 Dec-11-1996
BFR 181
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-emitter cutoff current
V
= 20 V,
CE
V
BE
= 0
Collector-base cutoff current
V
= 10 V,
CB
I
E
= 0
Emitter-base cutoff current
V
= 1 V,
EB
I
C
= 0
DC current gain
I
= 5 mA,
C
V
CE
= 8 V
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
V
12 - -
µA
- - 100
nA
- - 100
µA
- - 1
-
50 100 200
Semiconductor Group 2 Dec-11-1996
BFR 181
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
= 10 mA,
C
V
= 8 V, f = 500 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Collector-emitter capacitance
V
= 10 V, f = 1 MHz
CE
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Noise figure
I
= 2 mA,
C
f
= 900 MHz
V
CE
= 8 V,
Z
=
Z
S
Sopt
f
C
C
C
F
T
GHz
6 8 -
cb
pF
- 0.26 0.45
ce
- 0.18 -
eb
- 0.3 dB
-
1.45
-
f
= 1.8 GHz
V
V
1)
CE
=
2)
CE
=
Power gain
I
= 5 mA,
C
Z
=
Z
S
Sopt, ZL
Power gain
I
= 5 mA,
C
Z
=
Z
S
Sopt, ZL
Transducer gain
I
= 5 mA,
C
f
= 900 MHz
f
= 1.8 GHz
1)
G
ms
2)
G
ma
= |
= |
S
S
V
21
21
CE
/
/
S
S
= 8 V, f = 900 MHz
Z
Lopt
= 8 V, f = 1.8 GHz
Z
Lopt
= 8 V,
12
12
Z
=
S
|
| (k-(k2-1)
Z
1/2
= 50
L
)
Ω
G
G
|
S
ms
ma
21e
-
- 18 -
- 11.5 -
2
|
-
-
1.8
14
9
-
-
-
Semiconductor Group 3 Dec-11-1996
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