Siemens BFR180W Datasheet

BFR 180W

NPN Silicon RF Transistor

• For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2mA to 2.5mA

•

f

= 7GHz

T

F = 2.1dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFR 180W RDs Q62702-F1490 1 = B 2 = E 3 = C SOT-323

Maximum Ratings Parameter Symbol Values Unit

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation

T

≤ 126 °C

S

Junction temperature Ambient temperature Storage temperature

V V V V I I P

T T T

C B

CEO CES CBO EBO

tot

j A stg

8 V 10 10

2

4 mA

0.5

mW

30

150 °C

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

R

thJS

≤

790 K/W

1)

T

is measured on the collector lead at the soldering point to the pcb.

S

Semiconductor Group 1 Dec-11-1996

BFR 180W

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-emitter cutoff current

V

= 10 V,

CE

V

BE

= 0

Collector-base cutoff current

V

= 8 V,

CB

I

E

= 0

Emitter-base cutoff current

V

= 1 V,

EB

I

C

= 0

DC current gain

I

= 1 mA,

C

V

CE

= 5 V

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

V

8 - -

µA

- - 100 nA

- - 100 µA

- - 1

-

30 100 200

Semiconductor Group 2 Dec-11-1996

BFR 180W

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

I

= 3 mA,

C

V

= 5 V, f = 500 MHz

CE

Collector-base capacitance

V

= 5 V, f = 1 MHz

CB

Collector-emitter capacitance

V

= 5 V, f = 1 MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 1 mA,

C

f

= 900 MHz

V

CE

= 5 V,

Z

=

Z

S

Sopt

f

C

F

T

GHz

5 7 -

cb

pF

- 0.3 0.45

ce

- 0.22 -

eb

- 0.1 dB

-

2.1

-

f

= 1.8 GHz

V

1)

CE

Power gain

I

= 1 mA,

C

Z

=

Z

L

Lopt

f

= 900 MHz

f

= 1.8 GHz

Transducer gain

I

= 1 mA,

C

f

= 900 MHz

f

= 1.8 GHz

1)

G

ms

= |

S

V

21

CE

/

S

= 5 V,

|

12

-

G

ms

Z

=

Z

S

Sopt

-

S

21e

2

|

Z

=

Z

= 50 Ω

S

L

-

2.25

13.5

10.5

8.5 6

-

Semiconductor Group 3 Dec-11-1996