Siemens BFR106 Datasheet

BFR 106

NPN Silicon RF Transistor

• For low noise, high-gain amplifiers

• For linear broadband amplifiers

• Special application: antenna amplifiers

• Complementary type: BFR 194 (PNP)

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFR 106 R7s Q62702-F1219 1 = B 2 = E 3 = C 4 = E SOT-23

Maximum Ratings Parameter Symbol Values Unit

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation

T

≤ 73 °C

S

Junction temperature Ambient temperature Storage temperature

V V V V I I P

T T T

C B

CEO CES CBO EBO

tot

j A stg

15 V 20 20

3

100 mA

12

mW 700 150 °C

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

R

thJS

≤ 110 K/W

1)

T

is measured on the collector lead at the soldering point to the pcb.

S

Semiconductor Group 1 Dec-11-1996

BFR 106

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-emitter cutoff current

V

= 20 V,

CE

V

BE

= 0

Collector-base cutoff current

V

= 10 V,

CB

I

E

= 0

Emitter-base cutoff current

V

= 2 V,

EB

I

C

= 0

DC current gain

I

= 70 mA,

C

V

CE

= 8 V

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

V

15 - -

µA

- - 100 nA

- - 100 µA

- - 10

-

40 100 220

Semiconductor Group 2 Dec-11-1996

BFR 106

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

I

= 70 mA,

C

V

= 8 V, f = 500 MHz

CE

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Collector-emitter capacitance

V

= 10 V, f = 1 MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 20 mA,

C

f

= 900 MHz

V

CE

= 8 V,

Z

=

S

Z

Sopt

f

C

F

T

GHz

3.5 5 -

cb

pF

- 0.95 1.5

ce

- 0.25 -

eb

- 4.4 dB

-

2.5

-

f

= 1.8 GHz

V

2)

CE

Power gain

I

= 70 mA,

C

Z

=

Z

L

Lopt

f

= 900 MHz

f

= 1.8 GHz

Transducer gain

I

= 70 mA,

C

f

= 900 MHz

f

= 1.8 GHz

2)

G

= |

ma

S

21

V

/

CE

S

= 8 V,

| (k-(k2-1)

12

-

G

ma

Z

=

Z

S

Sopt

-

S

21e

2

|

Z

=

Z

= 50 Ω

S

L

-

1/2

)

4

12.5

7.5

10.5 5

-

Semiconductor Group 3 Dec-11-1996