Siemens BFQ81 Datasheet

BFQ 81

NPN Silicon RF Transistor

• For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA.

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFQ 81 RAs Q62702-F1049 1 = B 2 = E 3 = C SOT-23

Maximum Ratings Parameter Symbol Values Unit

Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation

T

≤ 59 °C

S

Junction temperature Ambient temperature Storage temperature

V V V V I I P

T T T

C B

CEO CES CBO EBO

tot

j A stg

16 V 25 25

2

30 mA

4

mW 280 150 °C

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

R

thJS

≤

325 K/W

1)

T

is measured on the collector lead at the soldering point to the pcb.

S

Semiconductor Group 1 Dec-12-1996

BFQ 81

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-emitter cutoff current

V

= 25 V,

CE

V

BE

= 0

Collector-base cutoff current

V

= 10 V,

CB

I

E

= 0

Emitter-base cutoff current

V

= 2 V,

EB

I

C

= 0

DC current gain

I

= 15 mA,

C

V

CE

= 8 V

V

(BR)CEO

I

CES

I

CBO

I

EBO

h

FE

V

16 - -

µA

- - 100 nA

- - 100 µA

- - 10

-

50 120 200

Semiconductor Group 2 Dec-12-1996

BFQ 81

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

I

= 15 mA,

C

V

= 8 V, f = 500 MHz

CE

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Collector-emitter capacitance

V

= 10 V, f = 1 MHz

CE

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Noise figure

I

= 5 mA,

C

f

= 900 MHz

V

CE

= 8 V,

Z

=

Z

S

Sopt

f

C

F

T

GHz

4.5 5.8 -

cb

pF

- 0.39 0.6

ce

- 0.19 -

eb

- 0.9 dB

-

1.45

-

f

= 1.8 GHz

V

2)

CE

Power gain

I

= 15 mA,

C

Z

=

Z

L

Lopt

f

= 900 MHz

f

= 1.8 GHz

Transducer gain

I

= 15 mA,

C

f

= 900 MHz

f

= 1.8 GHz

2)

G

= |

ma

S

21

V

/

CE

S

= 8 V,

| (k-(k2-1)

12

-

G

ma

Z

=

Z

S

Sopt

-

S

21e

2

|

Z

=

Z

S

L

= 50

Ω

-

1/2

)

2.2

16

10.5

13

7.5

-

Semiconductor Group 3 Dec-12-1996