Siemens BFQ76 Datasheet
PNP Silicon RF Transistor BFQ 76
● For broadband amplifiers up to 2 GHz
at collector currents up to 20 mA.
● Complementary type: BFQ 71 (NPN).
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking
Ordering Code
(tape and reel)
BFQ 76 Q62702-F80476 Cerec-X
Pin Configuration
1 2 3 4
B E C E
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
Collector-base voltage V
CE0 15 V
CB0 20
Emitter-base voltage VEB0 2
Collector current I
Total power dissipation, T
S ≤ 116 ˚C
3)
C 30 mA
Ptot 250 mW
Junction temperature Tj 175 ˚C
Ambient temperature range T
A – 65 … + 175
Storage temperature range Tstg – 65 … + 175
1)
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
For detailed dimensions see chapter Package Outlines.
2)
Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
3)
TS is measured on the collector lead at the soldering point to the pcb.
2)
3)
Rth JA ≤ 315 K/W
Rth JS ≤ 235
Electrical Characteristics
Ω
A = 25 ˚C, unless otherwise specified.
at T
BFQ 76
Parameter Symbol
DC Characteristics
V
(BR)CE0 15 – –
C = 1 mA, IB = 0
I
I
CB0 ––50
VCB = 10 V, IE = 0
I
EB0 ––10
EB = 2 V, IC = 0
V
h
FE 20 50 –
IC = 14 mA, VCE = 10 V
AC Characteristics
f
T –5–
C = 14 mA, VCE = 10 V, f = 500 MHz
I
C
cb – 0.55 –
CB = 10 V, VBE = vbe = 0, f = 1 MHz
V
UnitValues
min. typ. max.
VCollector-emitter breakdown voltage
nACollector-base cutoff current
µAEmitter-base cutoff current
–DC current gain
GHzTransition frequency
pFCollector-base capacitance
Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Output capacitance
CE = 10 V, VBE = vbe = 0, f = 1 MHz
V
I
C = 5 mA, VCE = 6 V, f = 10 MHz, ZS = 75
C = 4 mA, VCE = 10 V, f = 800 MHz, ZS = ZSopt
I
Power gain
C = 14 mA, VCE = 10 V, f = 800 MHz,
I
S = ZSopt, ZL = ZLopt
Z
C
ibo – 1.2 –
C
obs – 0.9 –
F
–
–
1.8
2.5
–
–
Gpe –17–
dBNoise figure
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