Siemens BFQ75 Datasheet

PNP Silicon RF Transistor BFQ 75

● For broadband amplifiers up to 2 GHz

at collector currents from 5 mA to 30 mA.

● Complementary type: BFQ 72 (NPN).

ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking

Ordering Code
(tape and reel)

BFQ 75 Q62702-F80375 Cerec-X

Pin Configuration

1 2 3 4

B E C E

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 12 V

Collector-emitter voltage, VBE = 0 VCES 1
Collector-base voltage V

CB0 15

Emitter-base voltage VEB0 2
Collector current I
Total power dissipation, T

S ≤ 112 ˚C

3)

C 50 mA

Ptot 350 mW

Junction temperature Tj 175 ˚C
Ambient temperature range T

A – 65 … + 175

1)

Storage temperature range T

stg – 65 … + 175

Thermal Resistance

Junction - ambient
Junction - soldering point

1)

For detailed dimensions see chapter Package Outlines.

2)

Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.

3)

TS is measured on the collector lead at the soldering point to the pcb.

2)

3)

Rth JA ≤ 260 K/W
Rth JS ≤ 180

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BFQ 75

BFQ 75

Parameter Symbol

DC Characteristics

V

(BR)CE0 12 – –

C = 1 mA, IB = 0

I

I

CB0 ––50

VCB = 5 V, IE = 0

I

EB0 ––10

EB = 2 V, IC = 0

V

h

FE 20 50 –

IC = 30 mA, VCE = 5 V

AC Characteristics

f

T –5–

C = 30 mA, VCE = 5 V, f = 500 MHz

I

C

cb – 0.75 –

CB = 10 V, VBE = vbe = 0, f = 1 MHz

V

UnitValues

min. typ. max.

VCollector-emitter breakdown voltage

nACollector-base cutoff current

µAEmitter-base cutoff current

–DC current gain

GHzTransition frequency

pFCollector-base capacitance

Input capacitance
VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Output capacitance

CE = 10 V, VBE = vbe = 0, f = 1 MHz

V

I

C = 10 mA, VCE = 8 V, f = 10 MHz, ZS = 50 Ω
C = 10 mA, VCE = 8 V, f = 800 MHz, ZS = 50 Ω

I

Power gain

C = 30 mA, VCE = 8 V, f = 800 MHz,

I

S = ZSopt, ZL = ZLopt

Z

C

ibo – 1.6 –

C

obs – 1.1 –

F

–
–

2.2
3

–
–

Gpe –14–

dBNoise figure