Siemens BF720 Datasheet

NPN Silicon High-Voltage Transistors BF 720

BF 722

● Suitable for video output stages in TV sets and

switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Low capacitance

● Complementary types: BF 721/723 (PNP)

Type Ordering Code

BF 720
BF 722

Marking

BF 720
BF 722

(tape and reel)

Q62702-F1238
Q62702-F1306

Pin Configuration

1 2 3 4

B C E C

Package

SOT-223

Maximum Ratings
Parameter Symbol Values Unit

BF 720 BF 722

Collector-emitter voltage V

Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Peak collector current ICM
Total power dissipation, T

S ≤ 110 ˚C

2)

Junction temperature Tj ˚C

CE0

VCER

–
300

250
–

V

300 250

EB0

55

50

100

Ptot W

1.5

150

1)

Storage temperature range T

stg

– 65 … + 150

Thermal Resistance

Junction - ambient

2)

Rth JA ≤ 87 K/W

Junction - soldering point Rth JS ≤ 27

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 1

5.91

Electrical Characteristics

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BF 720

BF 722

UnitValuesParameter Symbol

min. typ. max.

V

(BR)CE0 250 – –

C = 1 mA, IB = 0 BF 722

V

Collector-emitter breakdown voltage

C = 10 µA, RBE = 2.7 kΩ BF 720

Collector-base breakdown voltage

C = 10 µA, IB = 0 BF 720

BF 722

Emitter-base breakdown voltage

E = 10 µA, IC = 0

CB = 200 V, IE = 0

V

Collector-emitter cutoff current

CE = 200 V, RBE = 2.7 kΩ

V

CE = 200 V, RBE = 2.7 kΩ, TA = 150 ˚C

V

EB = 5 V, IC = 0

V

DC current gain

C = 25 mA, VCE = 20 V

Collector-emitter saturation voltage

C = 30 mA, IB = 5 mA

1)

1)

(BR)CER 300 – –

(BR)CB0

V

300
250

V

(BR)EB0 5––

I

CB0 ––10

CER

I

–
–

I

EB0 ––10

–
–

–
–

–
–

50
10

hFE 50 – –

VCEsat – – 0.6

VCollector-emitter breakdown voltage

nACollector-base cutoff current

nA

µA
µAEmitter-base cutoff current

–

V

AC characteristics

C = 10 mA, VCE = 10 V, f = 100 MHz

CB = 30 V, IC = 0, f = 1 MHz

V

f

T – 100 –

C

obo – 0.8 –

MHzTransition frequency

pFCollector-base capacitance

1)

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group 2