Siemens BF660W Datasheet

BF 660W

PNP Silicon RF Transistor

• For VHF oscillator applications

Type Marking Ordering Code Pin Configuration Package

BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation

T

≤ 93 °C

S

Junction temperature
Storage temperature

V
V
V
I
I
P

T
T

C
B

CEO
CBO
EBO

tot

j
stg

30 V
40

4

25 mA

5

mW
280
150 °C

- 65 ... + 150

Thermal Resistance

Junction - soldering point

R

thJS

205 K/W

Semiconductor Group 1 Aug-14-1996

BF 660W

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 1 mA,

C

I

B

= 0

Collector-base breakdown voltage

I

= 10 µA,

C

I

E

= 0

Base-emitter breakdown voltage

I

= 10 µA,

E

I

C

= 0

Collector-base cutoff current

V

= 20 ,

CB

I

E

= 0

DC current gain

I

= 3 mA,

C

V

CE

= 10 V

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

V

30 - -

40 - -

4 - -

nA

- - 50

-

30 - -

AC Characteristics

Transition frequency

I

= 5 mA,

C

V

= 10 V, f = 100 MHz

CE

Collector-base capacitance

V

= 10 V,

CB

V

BE

=

v

= 0 , f = 1 MHz

be

Collector-emitter capacitance

V

= 10 V,

CE

V

BE

=

v

= 0 , f = 1 MHz

be

f

C

C

T

MHz

- 700 -

cb

pF

- 0.4 -

ce

- 0.15 -

Semiconductor Group 2 Aug-14-1996