Siemens BF660 Datasheet

PNP Silicon RF Transistor BF 660

● For VHF oscillator applications

Type Ordering Code

BF 660 Q62702-F982LEs SOT-23

Marking

(tape and reel)

Pin Configuration

1 2 3

B E C

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 30 V

Collector-base voltage VCB0 40
Emitter-base voltage V

EB0 4

Collector current IC 25 mA
Emitter current IE 30
Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW
Junction temperature T
Storage temperature range T

j 150 ˚C
stg – 65 … + 150

Thermal Resistance

1)

Junction - ambient

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.

2)

Semiconductor Group 1

Rth JA ≤ 450 K/W

07.94

Electrical Characteristics

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

BF 660

Parameter Symbol

DC Characteristics

V

(BR) CE0 30 – –

C = 1 mA, IB = 0

Collector-base breakdown voltage

C = 10 µA, IE = 0

Emitter-base breakdown voltage

E = 10 µA, IC = 0

CB = 20 V, IE = 0

V

C = 3 mA, VCE = 10 V

V

(BR) CB0 40 – –

V

(BR) EB0 4––

I

CB0 ––50

h

FE 30 – –

AC Characteristics

f

T – 700 –

C = 5 mA, VCE = 10 V, f = 100 MHz

UnitValues

min. typ. max.

VCollector-emitter breakdown voltage

nACollector cutoff current

–DC current gain

MHzTransition frequency

CB = 10 V, VBE = 0 V, f = 1 MHz

V

Collector-emitter capacitance

C

cb – 0.6 –

C

ce – 0.28 –

pFCollector-base capacitance

VCE = 10 V, VBE = 0 V, f = 1 MHz

Semiconductor Group 2