Siemens BF599 Datasheet

NPN Silicon RF Transistor BF 599

● Common emitter IF/RF amplifier

● Low feedback capacitance

due to shield diffusion

Type Ordering Code

Marking

(tape and reel)

BF 599 Q62702-F979NB SOT-23

Pin Configuration

1 2 3

B E C

Package

Maximum Ratings
Parameter Symbol Values Unit

Collector-emitter voltage V

CE0 25 V

Collector-base voltage VCB0 40
Emitter-base voltage V

EB0 4

Collector current IC 25 mA
Base current I

B 5

Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW
Junction temperature T
Storage temperature range T

j 150 ˚C
stg – 65 … + 150

Thermal Resistance

1)

Junction - ambient

1)

For detailed information see chapter Package Outlines.

2)

Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.

2)

Semiconductor Group 1

Rth JA ≤ 450 K/W

07.94

Electrical Characteristics

A = 25 ˚C, unless otherwise specified.

at T

BF 599

Parameter Symbol

DC Characteristics

V

(BR) CE0 25 – –

C = 1 mA, IB = 0

I

I

CB0 – – 100

V

CB = 20 V, IE = 0

h

FE 38 70 –

I

C = 7 mA, VCE = 10 V

V

CE sat – 0.15 –

C = 10 mA, IB = 1 mA

I

Base-emitter voltage

C = 7 mA, VCE = 10 V

I

V

BE – 0.78 –

AC Characteristics

f

T – 550 –

C = 5 mA, VCE = 10 V, f = 100 MHz

I

UnitValues

min. typ. max.

VCollector-emitter breakdown voltage

nACollector cutoff current

–DC current gain

VCollector-emitter saturation voltage

MHzTransition frequency

CB = 10 V, VBE = 0 V, f = 1 MHz

V

Collector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz

C = 7 mA, VCE = 10 V, f = 35 MHz

I

C = 7 mA, VCE = 10 V, f = 35 MHz

I

C

cb – 0.35 –

C

ce – 0.68 –

G

pe opt –43–

I y

21e I – 175 –

pFCollector-base capacitance

dBOptimum power gain

mSForward transfer admittance

Semiconductor Group 2