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BF 569W
PNP Silicon RF Transistor
kein Status
• For oscillators, mixer and self-oscillating
mixer stages in UHF TV-tuner
Type Marking Ordering Code Pin Configuration Package
BF 569W LHs Q62702-F1582 1 = B 2 = E 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
≤ 93 °C
S
Junction temperature
Storage temperature
V
V
V
I
I
P
T
T
C
B
CEO
CBO
EBO
tot
j
stg
35 V
40
3
30 mA
5
mW
280
150 °C
- 65 ... + 150
Thermal Resistance
Junction - soldering point
R
thJS
≤
205 K/W
Semiconductor Group 1 Nov-28-1996
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BF 569W
Electrical Characteristics at
T
= 25°C, unless otherwise specified.
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 1 mA,
C
I
B
= 0
Collector-base cutoff current
V
= 20 ,
CB
I
E
= 0
DC current gain
I
= 3 mA,
C
V
CE
= 10 V
V
(BR)CEO
I
CBO
h
FE
V
35 - -
nA
- - 100
-
20 50 -
AC Characteristics
Transition frequency
I
= 30 mA,
C
V
= 10 V, f = 100 MHz
CE
Collector-base capacitance
V
= 10 V,
CB
V
BE
=
v
= 0 , f = 1 MHz
be
f
C
T
MHz
- 950 -
cb
pF
- 0.32 -
Collector-emitter capacitance
V
= 10 V,
CE
V
BE
=
v
= 0 , f = 1 MHz
be
Noise figure
I
= 3 mA,
C
Z
= 60
S
Ω
V
= 10 V, f = 800 MHz
CE
Cannon-base power gain
I
= 3 mA,
C
R
= 500
L
V
= 10 V, f = 800 MHz
CB
Ω
C
F
G
ce
- 0.15 dB
- 4.5 -
p
- 14.8 -
Semiconductor Group 2 Nov-28-1996