PNP Silicon RF Transistor BF 569
● For oscillators, mixers and
self-oscillating mixer stages in
UHF TV tuners
Type Ordering Code
BF 569 Q62702-F869LHs SOT-23
Marking
(tape and reel)
Pin Configuration
1 2 3
B E C
Package
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 35 V
Collector-base voltage VCB0 40
Emitter-base voltage V
EB0 3
Collector current IC 30 mA
Base current IB 5
Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW
Junction temperature T
Storage temperature range T
j 150 ˚C
stg – 55 … + 150
Thermal Resistance
1)
Junction - ambient
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm× 16.7 mm × 0.7 mm.
2)
Semiconductor Group 1
Rth JA ≤ 450 K/W
07.94
Electrical Characteristics
A = 25 ˚C, unless otherwise specified.
at T
BF 569
Parameter Symbol
DC Characteristics
V
(BR) CE0 35 – –
C = 1 mA, IB = 0
I
CB0 – – 100
CB = 20 V, IE = 0
V
h
FE 20 50 –
C = 3 mA, VCE = 10 V
AC Characteristics
f
T – 950 –
C = 3 mA, VCE = 10 V, f = 100 MHz
C
cb – 0.32 –
CB = 10 V, VBE = 0 V, f = 1 MHz
V
Collector-emitter capacitance
C
ce – 0.15 –
VCE = 10 V, VBE = 0 V, f = 1 MHz
UnitValues
min. typ. max.
VCollector-emitter breakdown voltage
nACollector cutoff current
–DC current gain
MHzTransition frequency
pFCollector-base capacitance
F – 4.5 –
C = 3 mA, VCB = 10 V, f = 800 MHz
S = 60 Ω
C = 3 mA, VCB = 10 V, f = 800 MHz
L = 500 Ω
Common base power gain
p – 14.8 –
G
dBNoise figure
Semiconductor Group 2