Siemens BCW66F, BCW65C, BCW65B, BCW65A, BCW66H Datasheet
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NPN Silicon AF Transistors BCW 65
BCW 66
● For general AF applications
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BCW 67, BCW 68 (PNP)
Type Ordering Code
Marking
(tape and reel)
BCW 65 A
BCW 65 B
BCW 65 C
BCW 66 F
BCW 66 G
BCW 66 H
EAs
EBs
ECs
EFs
EGs
EHs
Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
Pin Configuration
1 2 3
B E C
Package
SOT-23
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
BCW 65
BCW 66
Maximum Ratings
Parameter Symbol Values Unit
BCW 65 BCW 66
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current I
Peak collector current ICM A
CE0 V
32 45
60 75
EB0
C mA
55
800
1
Base current IB mA100
Peak base current I
Total power dissipation, T
S = 79 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
BM 200
330
150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 285 K/W
Junction - soldering point Rth JS ≤ 215
1)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 2
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