Siemens BCW60, BCX70 Technical data
BCW60B
NPN Silicon AF Transistors |
BCW 60 |
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BCX 70 |
●For AF input stages and driver applications
●High current gain
●Low collector-emitter saturation voltage
●Low noise between 30 Hz and 15 kHz
●Complementary types: BCW 61, BCX 71 (PNP)
Type |
Marking |
Ordering Code |
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Pin Configuration |
Package1) |
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(tape and reel) |
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1 |
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2 |
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3 |
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BCW 60 A |
AAs |
Q62702-C1517 |
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SOT-23 |
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B |
E |
C |
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BCW 60 B |
ABs |
Q62702-C1497 |
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BCW 60 C |
ACs |
Q62702-C1476 |
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BCW 60 D |
ADs |
Q62702-C1477 |
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BCW 60 FF |
AFs |
Q62702-C1529 |
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BCW 60 FN |
ANs |
Q62702-C1567 |
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BCX 70 G |
AGs |
Q62702-C1539 |
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BCX 70 H |
AHs |
Q62702-C1481 |
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BCX 70 J |
AJs |
Q62702-C1552 |
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BCX 70 K |
AKs |
Q62702-C1571 |
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1) For detailed information see chapter Package Outlines.
Semiconductor Group |
1 |
5.91 |
BCW 60
BCX 70
Maximum Ratings
Parameter |
Symbol |
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Values |
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Unit |
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BCW 60 |
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BCW 60 FF |
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BCX 70 |
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Collector-emitter voltage |
VCE0 |
32 |
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32 |
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45 |
V |
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Collector-base voltage |
VCB0 |
32 |
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32 |
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45 |
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Emitter-base voltage |
VEB0 |
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5 |
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Collector current |
IC |
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100 |
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mA |
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Peak collector current |
ICM |
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200 |
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Peak base current |
IBM |
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200 |
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Total power dissipation, TS = 71 ˚C |
Ptot |
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330 |
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mW |
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Junction temperature |
Tj |
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150 |
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˚C |
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Storage temperature range |
Tstg |
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– 65 … + 150 |
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Thermal Resistance |
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Junction - ambient1) |
Rth JA |
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≤ 310 |
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K/W |
Junction - soldering point |
Rth JS |
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≤ 240 |
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1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group |
2 |
BCW 60
BCX 70
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter |
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Symbol |
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Values |
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Unit |
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min. |
typ. |
max. |
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DC characteristics |
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Collector-emitter breakdown voltage |
V(BR)CE0 |
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V |
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IC = 10 mA |
BCW 60, BCW 60 FF |
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32 |
– |
– |
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BCX 70 |
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45 |
– |
– |
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Collector-base breakdown voltage |
V(BR)CB0 |
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IC = 10 μA |
BCW 60, BCW 60 FF |
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32 |
– |
– |
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BCX 70 |
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45 |
– |
– |
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Emitter-base breakdown voltage |
V(BR)EB0 |
5 |
– |
– |
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IE = 1 μA |
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Collector cutoff current |
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ICB0 |
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VCB = 32 V |
BCW 60, BCW 60 FF |
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– |
– |
20 |
nA |
VCB = 45 V |
BCX 70 |
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– |
– |
20 |
nA |
VCB = 32 V, TA = 150 ˚C |
BCW 60, BCW 60 FF |
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– |
– |
20 |
μA |
VCB = 45 V, TA = 150 ˚C |
BCX 70 |
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– |
– |
20 |
μA |
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Emitter cutoff current |
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IEB0 |
– |
– |
20 |
nA |
VEB = 4 V |
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DC current gain 1) |
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hFE |
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– |
IC = 10 μA, VCE = 5 V |
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20 |
140 |
– |
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BCW 60 A, BCX 70 G |
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BCW 60 B, BCX 70 H |
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20 |
200 |
– |
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BCW 60 FF, BCW 60 C, BCX 70 J |
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40 |
300 |
– |
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BCW 60 FN, BCW 60 D, BCX 70 K |
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100 |
460 |
– |
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IC = 2 mA, VCE = 5 V |
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120 |
170 |
220 |
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BCW 60 A, BCX 70 G |
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BCW 60 B, BCX 70 H |
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180 |
250 |
310 |
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BCW 60 FF, BCW 60 C, BCX 70 J |
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250 |
350 |
460 |
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BCW 60 FN, BCW 60 D, BCX 70 K |
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380 |
500 |
630 |
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IC = 50 mA, VCE = 1 V |
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50 |
– |
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BCW 60 A, BCX 70 G |
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– |
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BCW 60 B, BCX 70 H |
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70 |
– |
– |
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BCW 60 FF, BCW 60 C, BCX 70 J |
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90 |
– |
– |
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BCW 60 FN, BCW 60 D, BCX 70 K |
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100 |
– |
– |
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1) Pulse test: t ≤ 300 μs, D ≤ 2 %. |
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Semiconductor Group |
3 |
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