Page 1
BCW32
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
currents to 300mA.
• Sourced from process 10.
3
2
SOT-23
1
Mark: D2
1. Base 2. Emitter 3. Collector
BCW32
Absolute Maximum Ratings * T
=25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
, T
T
J
stg
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Collector-Emitter Voltage 32 V
Collector-Base Voltage 32 V
Emitter-Base Voltage 5.0 V
Collector current (DC) 500 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-Base Breakdown Voltage IC = 2.0mA, IB = 0 32 V
Collector-Emitter Breakdown Voltage IC = 10µA, IB = 0 32 V
Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 5.0 V
Collector Cutoff Current VCB = 32V, IE = 0
= 32V, IE = 0, TA = 100°C
V
CB
10010nA
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
DC Current Gain IC = 2.0mA, VCE = 5.0V 200 450
Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA 0.25 V
Base-Emitter On Voltage IC = 2.0mA, VCE = 5.0V 0.55 0.7 V
Small Signal Characteristics
f
T
C
obo
NF Noise Figure I
Current Gain Bandwidth Product IC = 2.0mA, VCE = 5.0V
200
f = 35MHz
Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 4.0 pF
= 0.2mA, VCE = 5.0V
C
= 2.0kΩ, f = 1.0kHz
R
S
= 200Hz
B
W
10 dB
µA
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJA
Device mounted on FR-4PCB 40mm × 40mm × 1.5mm
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Thermal Resistance, Junction to Ambient 357 °C/W
Page 2
Typical Characteristics
0.1 1 10 100
0.1
1
10
100
V - COLLECTOR VOLTAGE (V)
CAPA CITANCE (pF)
Cib
Cob
f = 1.0 MHz
ce
BCW32
400
125
°C
캜캜캜캜
Vce = 5V
300
캜캜캜캜
°C
25
200
캜캜캜캜
- 40
°C
100
0
FE
10 20 30 50 100 200 300 500
h - TYPICAL PULSED CURRENT GAIN
I - COLLECTOR CURRENT (mA)
C
Figure 1. Typical Pulsed Current Gain vs
Collector Current
1
°°°°C
캜캜캜캜
- 40
0.8
°°°°C
캜캜캜캜
0.6
0.4
25
125
캜캜캜캜
°°°°C
β
β = 10
β β
0.2
0.1 1 10 100 300
BESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
0.4
β
β
= 10
β β
0.3
캜캜캜캜
°°°°C
25
0.2
캜캜캜캜
°°°°C
0.1
1 10 100 400
CESAT
V - COLLECTOR-EMITTER VOLTAGE (V)
I - COLLECTOR CURRENT (mA)
C
125
- 40
캜캜캜캜
°°°°C
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
°°°°C
캜캜캜캜
0.8
0.6
0.4
- 40
25
V = 5V
CE
캜캜캜캜
°°°°C
125
캜캜캜캜
°°°°C
0.2
BEON
V - BASE-EMITTER ON VOLTAGE (V)
1 10 100 500
I - COLLECTOR CURRENT (mA)
C
Figure 4. Base-Emitter On Voltage
vs Collector Current
10
V = 60V
CB
1
CBO
I - COLLECTOR CURRENT (nA)
0.1
25 50 75 100 125 150
T - AMBIENT TEMPERATURE ( C)
A
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
°
Figure 6. Input and Outtput Capacitance
vs Reverse Voltage
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BCW32
Typical Characteristics
300
270
240
210
180
150
120
TIME (nS)
90
60
30
0
10 20 30 50 100 200 300
IB1 = IB2 = Ic / 10
V = 10 V
cc
t
t
f
r
t
d
I - COLLECTOR CURRENT (mA)
C
Figure 7. Switching Times vs
Collector Current
(Continued)
t
s
350
300
250
200
150
100
50
D
P - POWER DISSIPATION (mW)
0
0 25 50 75 100 125 150
TEMPERATURE ( C)
SOT-23
o
Figure 8. Power Dissi pa tion vs
Ambient Temperature
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Page 4
Package Dimensions
0.40
±0.03
BCW32
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, August 2002
Page 5
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I
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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